IPT015N10NF2SATMA1 vs IPTG025N15NM6ATMA1 Comparison

Detailed side-by-side comparison of IPT015N10NF2SATMA1 by Infineon and IPTG025N15NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPT015N10NF2SATMA1 IPTG025N15NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V 150 V
Continuous Drain Current (ID, Tc) 315 A —
Continuous Drain Current (ID, Ta) 35 A —
On-Resistance (RDS(on)) at VGS=10V 1.5 mΩ —
Gate-Source Threshold (VGS(th)) 3.8 V at 267 µA —
Total Power Dissipation (Ta) 3.8 W —
Total Power Dissipation (Tc) 300 W —
Operating Temperature Range -55 °C to +175 °C -55 C to +175 C (typical for OptiMOS 6)
Package PG-HSOF-8-10 (9-pin, 8+tab) PG-HSOG-8-1 (TOLG)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS trench, N-channel enhancement OptiMOS 6 150 V (N-channel trench)
Gate Drive Voltage (typ) 10 V —
Single Pulse Avalanche Energy [DATA_NEEDED: EAS value] —
RoHS Status Compliant Compliant
Manufacturer — Infineon Technologies
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at TA=25C — 26 A
Continuous Drain Current (ID) at TC=25C — 264 A (pulsed)
Power Dissipation (PD) at TA=25C — 3.8 W
Power Dissipation (PD) at TC=25C — 395 W
On-State Resistance RDS(on) typ — 2.5 mOhm at VGS=10 V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) value]
Total Gate Charge Qg typ — [DATA_NEEDED: Qg value]
MSL (Moisture Sensitivity Level) — MSL1 (per JEDEC J-STD-020)
Solder Joint Reliability — Excellent - 30% smaller footprint than D2PAK

Datasheets & Resources

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