IPT015N10NF2SATMA1 vs IPTG025N15NM6ATMA1 Comparison
Detailed side-by-side comparison of IPT015N10NF2SATMA1 by Infineon and IPTG025N15NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPT015N10NF2SATMA1
IPT015N10NF2SATMA1 - 100V 315A 1.5mΞ© OptiMOS MOSFET | Infineon
IPT015N10NF2SATMA1 β ActiveInfineon
IPTG025N15NM6ATMA1
IPTG025N15NM6ATMA1 - 150V OptiMOS 6 N-Channel MOSFET | Infineon
IPTG025N15NM6ATMA1 β ActiveSpecification Comparison
| Parameter | IPT015N10NF2SATMA1 | IPTG025N15NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.10 | $1.52 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 100 V | 150 V |
| Continuous Drain Current (ID, Tc) | 315 A | β |
| Continuous Drain Current (ID, Ta) | 35 A | β |
| On-Resistance (RDS(on)) at VGS=10V | 1.5 mΞ© | β |
| Gate-Source Threshold (VGS(th)) | 3.8 V at 267 Β΅A | β |
| Total Power Dissipation (Ta) | 3.8 W | β |
| Total Power Dissipation (Tc) | 300 W | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C | -55 C to +175 C (typical for OptiMOS 6) |
| Package | PG-HSOF-8-10 (9-pin, 8+tab) | PG-HSOG-8-1 (TOLG) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS trench, N-channel enhancement | OptiMOS 6 150 V (N-channel trench) |
| Gate Drive Voltage (typ) | 10 V | β |
| Single-Pulse Avalanche Energy | [DATA_NEEDED: EAS value] | β |
| RoHS Status | Compliant | Compliant |
| Manufacturer | β | Infineon Technologies |
| Polarity / Channel Type | β | N-Channel |
| Continuous Drain Current (ID) at TA=25C | β | 26 A |
| Continuous Drain Current (ID) at TC=25C | β | 264 A (pulsed) |
| Power Dissipation (PD) at TA=25C | β | 3.8 W |
| Power Dissipation (PD) at TC=25C | β | 395 W |
| On-State Resistance RDS(on) typ | β | 2.5 mOhm at VGS=10 V |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) typ | β | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge Qg typ | β | [DATA_NEEDED: Qg value] |
| MSL (Moisture Sensitivity Level) | β | MSL1 (per JEDEC J-STD-020) |
| Solder Joint Reliability | β | Excellent - 30% smaller footprint than D2PAK |