IPT015N10NF2SATMA1 vs IPTG025N15NM6ATMA1 比較
詳細並排比較 IPT015N10NF2SATMA1 由 Infineon 與 IPTG025N15NM6ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPT015N10NF2SATMA1 | IPTG025N15NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 150 V |
| Continuous Drain Current (ID, Tc) | 315 A | — |
| Continuous Drain Current (ID, Ta) | 35 A | — |
| On-Resistance (RDS(on)) at VGS=10V | 1.5 mΩ | — |
| Gate-Source Threshold (VGS(th)) | 3.8 V at 267 µA | — |
| Total Power Dissipation (Ta) | 3.8 W | — |
| Total Power Dissipation (Tc) | 300 W | — |
| 工作溫度範圍 | -55 °C to +175 °C | -55 C to +175 C (typical for OptiMOS 6) |
| 封裝 | PG-HSOF-8-10 (9-pin, 8+tab) | PG-HSOG-8-1 (TOLG) |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | OptiMOS trench, N-channel enhancement | OptiMOS 6 150 V (N-channel trench) |
| Gate Drive Voltage (typ) | 10 V | — |
| 單脈衝突崩能量 | [DATA_NEEDED: EAS value] | — |
| RoHS 狀態 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at TA=25C | — | 26 A |
| Continuous Drain Current (ID) at TC=25C | — | 264 A (pulsed) |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Power Dissipation (PD) at TC=25C | — | 395 W |
| On-State Resistance RDS(on) typ | — | 2.5 mOhm at VGS=10 V |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg value] |
| MSL (Moisture Sensitivity Level) | — | MSL1 (per JEDEC J-STD-020) |
| Solder Joint Reliability | — | Excellent - 30% smaller footprint than D2PAK |