IPT015N10NF2SATMA1 vs IPTG025N15NM6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPT015N10NF2SATMA1 disebabkan oleh Infineon dan IPTG025N15NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPT015N10NF2SATMA1 IPTG025N15NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V 150 V
Continuous Drain Current (ID, Tc) 315 A —
Continuous Drain Current (ID, Ta) 35 A —
On-Resistance (RDS(on)) at VGS=10V 1.5 mΩ —
Gate-Source Threshold (VGS(th)) 3.8 V at 267 µA —
Total Power Dissipation (Ta) 3.8 W —
Total Power Dissipation (Tc) 300 W —
Gambaran Suhu Operasi -55 °C to +175 °C -55 C to +175 C (typical for OptiMOS 6)
Kemasan PG-HSOF-8-10 (9-pin, 8+tab) PG-HSOG-8-1 (TOLG)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS trench, N-channel enhancement OptiMOS 6 150 V (N-channel trench)
Gate Drive Voltage (typ) 10 V —
Tenaga Gesa tunggal padek [DATA_NEEDED: EAS value] —
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at TA=25C — 26 A
Continuous Drain Current (ID) at TC=25C — 264 A (pulsed)
Power Dissipation (PD) at TA=25C — 3.8 W
Power Dissipation (PD) at TC=25C — 395 W
On-State Resistance RDS(on) typ — 2.5 mOhm at VGS=10 V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th) value]
Total Gate Charge Qg typ — [DATA_NEEDED: Qg value]
MSL (Moisture Sensitivity Level) — MSL1 (per JEDEC J-STD-020)
Solder Joint Reliability — Excellent - 30% smaller footprint than D2PAK

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