IPT022N10NF2SATMA1 vs IRFS4227TRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPT022N10NF2SATMA1 sa pamamagitan ng Infineon at IRFS4227TRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPT022N10NF2SATMA1 IPT022N10NF2SATMA1 - 100V 2.2mΩ StrongIRFET 2 N-MOSFET | Infineon

IPT022N10NF2SATMA1 - 100V 2.2mΩ StrongIRFET 2 N-MOSFET | Infineon

IPT022N10NF2SATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPT022N10NF2SATMA1 IRFS4227TRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies —
Product Family StrongIRFET 2 —
FET Type N-Channel N-Channel MOSFET, Metal Oxide
Drain-Source Voltage (V(BR)DSS) 100 V —
Continuous Drain Current (Id) at Ta 29 A —
Continuous Drain Current (Id) at Tc 236 A —
Typical RDS(on) at VGS=10V 2.2 mΩ —
Power Dissipation at Ta 3.8 W —
Power Dissipation at Tc 250 W —
Packhaging PG-HSOF-8-10 (8 leads + tab) D2PAK (TO-263), surface mount
Uri ng Pagpapasok Surface Mount Surface Mount
Technology Trench MOSFET HEXFET, IR MOSFET
Hanay ng Temperature na Operasyon -55C to +175C -40C to +150C (TJ)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical value] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical value] 70 nC
Tindminan RoHS Compliant Compliant
Drain-to-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) @ Tc = 25C — 62 A
Maximum Power Dissipation (PD) @ Tc = 25C — 330 W
On-Resistance RDS(on) max @ VGS = 10V — 26 mOhm
Gate-to-Source Voltage (VGS) max — ±30 V
Configuration — Single with built-in diode
Case Connection — DRAIN
Level ng MSL — 1 (unlimited)
Key Application — PDP Sustain / Energy Recovery Switch

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita