IRFS4227TRLPBF - 200V 62A N-Channel HEXFET MOSFET D2PAK | Infineon
MPN: IRFS4227TRLPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.57 | $4.57 |
| 10 | $3.89 | $38.90 |
| 100 | $3.21 | $321.00 |
| 500 | $2.74 | $1,370.00 |
| 1,000 | $2.38 | $2,380.00 |
IRFS4227TRLPBF Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-driven semiconductor switch that controls current flow between drain and source terminals. N-channel power MOSFETs such as the IRFS4227 are widely used as the lowest-resistance switching elements in 100-300 V applications because electrons (the majority carrier) move faster than holes, yielding lower RDS(on) per unit silicon area than P-channel counterparts. This device belongs to Infineon's HEXFET family - a planar cell architecture that delivers a well-characterized, broad SOA and robust avalanche rating.
Key features of the IRFS4227TRLPBF include 200 V drain-to-source breakdown voltage, 26 mOhm RDS(on) maximum at VGS = 10 V, 62 A continuous ID at case temperature 25C, 330 W maximum power dissipation at Tc, 70 nC total gate charge, and ±30 V gate-to-source voltage rating. The D2PAK (TO-263) surface-mount package has a low thermal resistance that allows the die to dissipate heat directly into the PCB copper pour, eliminating the need for an external heatsink in many high-current switching designs.
Internally, the IRFS4227 uses a HEXFET cell structure with a robust body diode and avalanche-rated die. The advanced process technology optimizes the trade-off between RDS(on), gate charge, and diode reverse recovery, making the part particularly efficient in zero-voltage-switching (ZVS) and hard-switched bridge topologies such as PDP sustain power stages. The low RDS(on)*Qg figure of merit (~1.82 nC*Ohm) translates directly into lower switching and conduction losses.
Typical applications include Plasma Display Panel (PDP) sustain switches and energy-recovery circuits, AC-DC SMPS (switch-mode power supply) primary-side switches, DC-DC converter high-side switches in telecom and server bricks, motor drive H-bridges for low-voltage industrial BLDC motors, and high-current solenoid/relay drivers. The D2PAK footprint is a long-standing industry standard, simplifying PCB layout and enabling second-source flexibility.
When designing with this part, calculate worst-case conduction loss as P = ID^2 * RDS(on) and ensure junction temperature stays below 150C using the published thermal resistance curves. Gate-drive voltage should be 10 V nominal to fully enhance the channel; gate-source Zener protection within the die allows VGS transients up to ±30 V. Use a gate resistor of 10-100 ohm to control ringing without excessive switching loss.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for IRFS4227TRLPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRFS4227PBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRFS4227TRLPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel MOSFET, Metal Oxide |
| Drain-to-Source Voltage (VDS) | 200 V |
| Continuous Drain Current (ID) @ Tc = 25C | 62 A |
| Maximum Power Dissipation (PD) @ Tc = 25C | 330 W |
| On-Resistance RDS(on) max @ VGS = 10V | 26 mOhm |
| Total Gate Charge (Qg) | 70 nC |
| Gate-to-Source Voltage (VGS) max | ±30 V |
| Configuration | Single with built-in diode |
| Case Connection | DRAIN |
| Technology | HEXFET, IR MOSFET |
| Package | D2PAK (TO-263), surface mount |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -40C to +150C (TJ) |
| MSL Level | 1 (unlimited) |
| RoHS Status | Compliant |
| Key Application | PDP Sustain / Energy Recovery Switch |
IRFS4227TRLPBF Pin Configuration
| Pin 1 | Gate — Gate drive input |
| Pin 2 | Drain — Power drain, electrically tied to the metal tab |
| Pin 3 | Source — Power source return |
Safe Operating Area - DC
Typical Applications
IRFS4227TRLPBF is suitable for 6 applications: Plasma Display Panel (PDP) Sustain Switch, AC-DC Switch-Mode Power Supply Primary Switch, DC-DC Converter High-Side Switch, BLDC Motor Drive H-Bridge, High-Current Solenoid and Relay Driver, Uninterruptible Power Supply (UPS) Battery Switch.
Plasma Display Panel (PDP) Sustain Switch
The IRFS4227TRLPBF is purpose-designed for PDP sustain switches and energy-recovery circuits in plasma televisions. Its 200 V VDS rating handles the typical 160-180 V sustain bus, while the 26 mOhm RDS(on) limits conduction loss during the high-peak current pulses that charge and discharge the panel capacitance many times per frame. The 70 nC gate charge enables fast switching at PDP operating frequencies in the 100-200 kHz range. The D2PAK package provides sufficient PCB copper area for heat dissipation without an external heatsink, keeping the sustain board compact.
Recommended
AC-DC Switch-Mode Power Supply Primary Switch
The IRFS4227TRLPBF works as the primary-side switch in AC-DC SMPS designs operating from rectified 100-141 V DC bus voltages. Its 200 V VDS provides adequate margin for the 170 V peak rectified mains plus leakage inductance spike. The 62 A pulsed current capability handles the high peak currents of continuous-conduction-mode (CCM) boost PFC and forward converters. Designers use the published SOA curves to ensure the part stays within thermal limits at the operating point. The D2PAK footprint supports PCB-mount heatsink attachment for sustained high-power operation.
Recommended
DC-DC Converter High-Side Switch
In telecom and server DC-DC bricks converting 48 V or 96 V rails to lower voltages, the IRFS4227TRLPBF serves as the high-side switch in buck or half-bridge topologies. The 200 V VDS rating provides ample margin above the 96 V telecom bus, while the 26 mOhm RDS(on) keeps conduction loss acceptable at 20-30 A load currents. The 70 nC gate charge is low enough to enable switching frequencies of 100-200 kHz with reasonable drive losses. The D2PAK package is a long-standing industry standard for these bricks.
Recommended
BLDC Motor Drive H-Bridge
For low-voltage industrial BLDC motor drives up to 150 V bus, the IRFS4227TRLPBF can be used in H-bridge or three-phase inverter configurations. Each switch carries pulsed currents up to the 62 A ID rating during motor commutation. The HEXFET die's avalanche rating absorbs the back-EMF energy from motor winding inductance during hard-switching transitions. Designers must check the SOA curves carefully for the high di/dt events during PWM switching at 10-20 kHz.
Recommended
High-Current Solenoid and Relay Driver
The IRFS4227TRLPBF switches high-current solenoids, relays, and contactors in industrial automation and automotive subsystems. The 62 A ID rating handles inrush currents of large DC solenoids, while the 200 V VDS rating tolerates the inductive kickback when the solenoid is de-energized (clamped by a flyback diode). The low 26 mOhm RDS(on) reduces steady-state dissipation when holding a solenoid energized for extended periods. The D2PAK package allows direct PCB mounting without an external heatsink for most solenoid applications.
Recommended
Uninterruptible Power Supply (UPS) Battery Switch
In UPS and battery management systems, the IRFS4227TRLPBF isolates the battery pack from the load during fault conditions or low-battery cutoff. The 200 V VDS rating accommodates 48 V battery stacks with significant transient headroom, while the 26 mOhm RDS(on) minimizes voltage drop and heat generation when the battery is supplying full load. The HEXFET process provides robust short-circuit handling - critical for UPS systems where battery-to-bus faults must be cleared quickly without damaging the switch.
Recommended
Recommended Products Summary
Engineering reference data for IRFS4227TRLPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFS4227PBF | IRFB4227PBF |
|---|---|---|---|
| Package | D2PAK (TO-263) | D2PAK (TO-263) - same | TO-220 (through-hole) - different |
| Brand | Infineon | Infineon | Infineon |
| VDS (V) | 200 V | 200 V | 200 V |
| Continuous ID at Tc=25C (A) | 62 A | 62 A | 62 A |
| RDS(on) max @ VGS=10V (mOhm) | 26 mOhm | 26 mOhm | 26 mOhm |
| Total Gate Charge Qg (nC) | 70 nC | 70 nC | 70 nC |
| Power Dissipation at Tc=25C (W) | 330 W | 330 W | 330 W |
| Packaging Format | Tape & Reel (TRL) | Tube (PBF) | Tube (PBF), TO-220 |
| Mounting Type | Surface Mount | Surface Mount | Through-Hole |
Key Differentiators
- Lowest RDS(on) in 200V D2PAK HEXFET family at this rating class (vs IRFB4227PBF)
- Tape-and-reel packaging for high-volume SMT (vs IRFS4227PBF)
- Optimized for PDP sustain switching with low E_PULSE rating (vs Generic 200V N-MOSFET)
Design Notes
Estimated: at ID = 30 A continuous and RDS(on) = 26 mOhm, conduction loss is I²R = 30² × 0.026 = 23.4 W. The D2PAK package has a published junction-to-ambient thermal resistance of approximately 40 C/W on a 1 sq inch copper pour at 1 oz copper. Junction temperature rise above 25C ambient is therefore 23.4 × 40 = 936 C, which exceeds the 150C limit. Use a minimum 4 sq inches of 2 oz copper, or attach a TO-220-style clip-on heatsink, to keep Tj below 125C at this current level.
The D2PAK metal tab is electrically tied to the drain, so the PCB copper pour under the tab also sits at drain potential. Use thermal vias (typically 9-12 vias of 0.3 mm diameter) under the tab to spread heat to an inner copper plane. For surface-mount assembly, follow the recommended footprint in the datasheet with at least 6 mm² of copper at the drain tab. Hand-soldering the tab requires a hot plate or hot-air rework station to avoid cold joints on the large thermal mass.
Do not exceed VGS = ±30 V even momentarily - the gate oxide is thin and will punch through. Use a gate-source Zener clamp (typically 15 V) when driving from a bootstrap supply that can overshoot during transients. For hard-switched applications above 100 kHz, verify switching loss from the published E_ON and E_OFF curves; the 70 nC gate charge does not capture Miller plateau losses. Finally, ensure the body diode's reverse recovery (Qrr) is acceptable for your topology - this part is optimized for hard switching, not for ZVS-only designs.
Compliance Information
RoHS compliant per Infineon product page. PBF suffix indicates lead-free terminal finish. Not AEC-Q100 qualified - this is an industrial/consumer grade part.
