IPT067N20NM6ATMA1 vs IQE020N04LM6CGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPT067N20NM6ATMA1 sa pamamagitan ng Infineon at IQE020N04LM6CGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPT067N20NM6ATMA1 - 200V 137A OptiMOS 6 Power MOSFET | Infineon
IPT067N20NM6ATMA1 ✓ NakahandaInfineon
IQE020N04LM6CGATMA1 - 40V 2.0mΩ OptiMOS 6 MOSFET | Infineon
IQE020N04LM6CGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPT067N20NM6ATMA1 | IQE020N04LM6CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | — |
| Uri ng Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 200 V | 40 V |
| Continuous Drain Current (ID) at TA=25C | 15.3 A | — |
| Continuous Drain Current (ID) at TC=25C | 137 A | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Power Dissipation (PD) at TC=25C | 300 W | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Packhaging | PG-HSOF-8-1 (8-pin + exposed tab) | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) |
| Hanay ng Temperature na Operasyon | -55C to +150C (junction) | -55°C to +150°C |
| Technology | Trench-gate OptiMOS 6 silicon | OptiMOS 6, TrenchFET-class |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| On-Resistance RDS(on) typ | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Gate Charge (Qg) typ | [DATA_NEEDED: total gate charge] | — |
| Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical value] | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Level ng MSL | [DATA_NEEDED: MSL moisture sensitivity level] | MSL1 (per JEDEC J-STD-020) |
| Configuration | Single N-channel | Single N-Channel, source-down |
| Series | — | OptiMOS 6 |
| Continuous Drain Current (ID) at TA=25°C | — | 25 A |
| Continuous Drain Current (ID) at TC=25°C | — | 166 A |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Power Dissipation (PD) at TC=25°C | — | 107 W |
| On-State Resistance (RDS(on)) typical @ VGS=10V | — | 2.0 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: Qg value] |