IPT067N20NM6ATMA1 vs IQE020N04LM6CGATMA1 比較
詳細並排比較 IPT067N20NM6ATMA1 由 Infineon 與 IQE020N04LM6CGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPT067N20NM6ATMA1 | IQE020N04LM6CGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 6 | — |
| 電晶體類型 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 200 V | 40 V |
| Continuous Drain Current (ID) at TA=25C | 15.3 A | — |
| Continuous Drain Current (ID) at TC=25C | 137 A | — |
| Power Dissipation (PD) at TA=25C | 3.8 W | — |
| Power Dissipation (PD) at TC=25C | 300 W | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 封裝 | PG-HSOF-8-1 (8-pin + exposed tab) | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) |
| 工作溫度範圍 | -55C to +150C (junction) | -55°C to +150°C |
| Technology | Trench-gate OptiMOS 6 silicon | OptiMOS 6, TrenchFET-class |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| On-Resistance RDS(on) typ | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Gate Charge (Qg) typ | [DATA_NEEDED: total gate charge] | — |
| Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical value] | — |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSL 等級 | [DATA_NEEDED: MSL moisture sensitivity level] | MSL1 (per JEDEC J-STD-020) |
| Configuration | Single N-channel | Single N-Channel, source-down |
| Series | — | OptiMOS 6 |
| Continuous Drain Current (ID) at TA=25°C | — | 25 A |
| Continuous Drain Current (ID) at TC=25°C | — | 166 A |
| Power Dissipation (PD) at TA=25°C | — | 2.5 W |
| Power Dissipation (PD) at TC=25°C | — | 107 W |
| On-State Resistance (RDS(on)) typical @ VGS=10V | — | 2.0 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: Qg value] |