IPW60R041C6FKSA1 vs SPW47N60C3 Comparison

Detailed side-by-side comparison of IPW60R041C6FKSA1 by Infineon and SPW47N60C3 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPW60R041C6FKSA1 SPW47N60C3
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status NRND Active
Stock Status In Stock In Stock
Unit Price (USD) $5.40 $6.10
Technology CoolMOS™ C6 (Superjunction N-channel) CoolMOS C3 (superjunction)
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc=25°C) 77.5 A —
Power Dissipation (PD, Tc=25°C) 481 W —
On-State Resistance (RDS(on)) 41 mΩ at VGS=10V —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V typical —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Rise Time (tr) [DATA_NEEDED: tr value] —
Fall Time (tf) [DATA_NEEDED: tf value] —
Operating Temperature Range -55°C to +150°C -55C to +150C (junction, typical for CoolMOS C3)
Package PG-TO247-3-1 (TO-247-3) TO-247-3-1 (PG-TO247-3-1) through-hole
Mounting Type Through Hole Through Hole
MSL Level Not Applicable (Through-hole) N/A (through-hole)
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Part Number — SPW47N60C3
Manufacturer — Infineon Technologies AG
Transistor Type — N-Channel MOSFET
Drain-Source Voltage (V(BR)DSS) — 650 V
Continuous Drain Current (ID) at Tc — 47 A
Power Dissipation (PD) at Tc — 415 W
RDS(on) (typical) — 70 mOhm [DATA_NEEDED: VGS test condition]
Gate Charge (Qg, typical) — [DATA_NEEDED: nanocoulombs]
Output Capacitance Eoss @ 400V — Very low (per C3 series datasheet)
Configuration — Single N-channel, 3 pins (G, D, S)
Series — CoolMOS C3 (600V generation)

Datasheets & Resources

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