IPW60R041C6FKSA1 vs SPW47N60C3 Vergleich

Detaillierter Direktvergleich von IPW60R041C6FKSA1 von Infineon und SPW47N60C3 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.

Spezifikationsvergleich

Parameter IPW60R041C6FKSA1 SPW47N60C3
Marke Infineon Infineon
Kategorie MOSFETs MOSFETs
Lebenszyklusstatus NRND Aktiv
Lagerstatus In Stock In Stock
Stückpreis (USD) $5,40 $6,10
Technology CoolMOS™ C6 (Superjunction N-channel) CoolMOS C3 (superjunction)
Drain-Source Voltage (VDS) 600 V —
Continuous Drain Current (ID, Tc=25°C) 77.5 A —
Power Dissipation (PD, Tc=25°C) 481 W —
On-State Resistance (RDS(on)) 41 mΩ at VGS=10V —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) 2.5 V to 3.5 V typical —
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Rise Time (tr) [DATA_NEEDED: tr value] —
Fall Time (tf) [DATA_NEEDED: tf value] —
Betriebstemperaturbereich -55°C to +150°C -55C to +150C (junction, typical for CoolMOS C3)
Gehäuse PG-TO247-3-1 (TO-247-3) TO-247-3-1 (PG-TO247-3-1) through-hole
Montageart Through Hole Through Hole
MSL-Level Not Applicable (Through-hole) N/A (through-hole)
RoHS-Status Compliant Compliant
Lead-Free Yes Yes
Part Number — SPW47N60C3
Manufacturer — Infineon Technologies AG
Transistortyp — N-Channel MOSFET
Drain-Source Voltage (V(BR)DSS) — 650 V
Continuous Drain Current (ID) at Tc — 47 A
Power Dissipation (PD) at Tc — 415 W
RDS(on) (typical) — 70 mOhm [DATA_NEEDED: VGS test condition]
Gate Charge (Qg, typical) — [DATA_NEEDED: nanocoulombs]
Output Capacitance Eoss @ 400V — Very low (per C3 series datasheet)
Configuration — Single N-channel, 3 pins (G, D, S)
Series — CoolMOS C3 (600V generation)

Datenblätter & Ressourcen

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