IPW60R041C6FKSA1 vs SPW47N60C3 비교
다음의 상세 나란히 비교: IPW60R041C6FKSA1 제조: Infineon 및 SPW47N60C3 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IPW60R041C6FKSA1 | SPW47N60C3 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | NRND | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $5.40 | $6.10 |
| Technology | CoolMOS™ C6 (Superjunction N-channel) | CoolMOS C3 (superjunction) |
| Drain-Source Voltage (VDS) | 600 V | — |
| Continuous Drain Current (ID, Tc=25°C) | 77.5 A | — |
| Power Dissipation (PD, Tc=25°C) | 481 W | — |
| On-State Resistance (RDS(on)) | 41 mΩ at VGS=10V | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | 2.5 V to 3.5 V typical | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Rise Time (tr) | [DATA_NEEDED: tr value] | — |
| Fall Time (tf) | [DATA_NEEDED: tf value] | — |
| 동작 온도 범위 | -55°C to +150°C | -55C to +150C (junction, typical for CoolMOS C3) |
| 패키지 | PG-TO247-3-1 (TO-247-3) | TO-247-3-1 (PG-TO247-3-1) through-hole |
| 실장 유형 | Through Hole | Through Hole |
| MSL 레벨 | Not Applicable (Through-hole) | N/A (through-hole) |
| RoHS 상태 | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Part Number | — | SPW47N60C3 |
| Manufacturer | — | Infineon Technologies AG |
| 트랜지스터 유형 | — | N-Channel MOSFET |
| Drain-Source Voltage (V(BR)DSS) | — | 650 V |
| Continuous Drain Current (ID) at Tc | — | 47 A |
| Power Dissipation (PD) at Tc | — | 415 W |
| RDS(on) (typical) | — | 70 mOhm [DATA_NEEDED: VGS test condition] |
| Gate Charge (Qg, typical) | — | [DATA_NEEDED: nanocoulombs] |
| Output Capacitance Eoss @ 400V | — | Very low (per C3 series datasheet) |
| Configuration | — | Single N-channel, 3 pins (G, D, S) |
| Series | — | CoolMOS C3 (600V generation) |