IQDH29NE2LM5CGSCATMA1 vs IQDH88N06LM5SCATMA1 Comparison

Detailed side-by-side comparison of IQDH29NE2LM5CGSCATMA1 by Infineon and IQDH88N06LM5SCATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IQDH29NE2LM5CGSCATMA1 IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΞ© MOSFET | Infineon

IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΞ© MOSFET | Infineon

IQDH29NE2LM5CGSCATMA1 βœ“ Active

Specification Comparison

Parameter IQDH29NE2LM5CGSCATMA1 IQDH88N06LM5SCATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.84 $2.55
FET Type N-Channel β€”
Technology OptiMOS 5 Power-Transistor N-Channel MOSFET (OptiMOS 5)
Drain-Source Voltage (VDS) 25 V 60 V
Continuous Drain Current (Ta) 75 A β€”
Continuous Drain Current (Tc) 789 A β€”
Power Dissipation (Ta) 2.5 W 3 W
Power Dissipation (Tc) 278 W 333 W
Maximum On-Resistance RDS(on) 0.29 mΞ© β€”
Gate Threshold Voltage VGS(th) 2 V (typ) β€”
Package PG-WHTFN-9-U02 (WHTFN EP) PG-WHSON-8-U02 (source-down, dual-side cooling)
Pin Count 9 β€”
Mounting Type Surface Mount Surface Mount
Cooling Dual-side exposed pad (top + bottom) β€”
MSL Level [DATA_NEEDED: MSL rating] β€”
RoHS Status Compliant Compliant
Manufacturer β€” Infineon Technologies
Part Number β€” IQDH88N06LM5SCATMA1
Series β€” OptiMOS 5
Continuous Drain Current (ID, Ta) β€” 42 A
Continuous Drain Current (ID, Tc) β€” 447 A
On-State Resistance (RDS(on)) β€” 0.7 mOhm at VGS = 10 V
Gate-Source Voltage (VGS) β€” +/- 20 V
Gate Threshold Voltage (VGS(th)) β€” 1.7 V
Total Gate Charge (Qg) β€” 76 nC
Input Capacitance (Ciss) β€” 11 nF
Output Capacitance (Coss) β€” 2 nF
Reverse Transfer Capacitance (Crss) β€” 95 pF
Operating Temperature Range β€” -55 C to +175 C

Datasheets & Resources

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