IQDH29NE2LM5CGSCATMA1 vs IQDH88N06LM5SCATMA1 Perbandingan
Perbandingan bersamaan detil IQDH29NE2LM5CGSCATMA1 dari Infineon dan IQDH88N06LM5SCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQDH88N06LM5SCATMA1 - 60V 447A 0.7mOhm OptiMOS 5 N-MOSFET | Infineon
IQDH88N06LM5SCATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IQDH29NE2LM5CGSCATMA1 | IQDH88N06LM5SCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 Power-Transistor | N-Channel MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 25 V | 60 V |
| Continuous Drain Current (Ta) | 75 A | — |
| Continuous Drain Current (Tc) | 789 A | — |
| Power Dissipation (Ta) | 2.5 W | 3 W |
| Power Dissipation (Tc) | 278 W | 333 W |
| Maximum On-Resistance RDS(on) | 0.29 mΩ | — |
| Gate Threshold Voltage VGS(th) | 2 V (typ) | — |
| Paket | PG-WHTFN-9-U02 (WHTFN EP) | PG-WHSON-8-U02 (source-down, dual-side cooling) |
| Jumlah Pin | 9 | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Cooling | Dual-side exposed pad (top + bottom) | — |
| Level MSL | [DATA_NEEDED: MSL rating] | — |
| Status RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IQDH88N06LM5SCATMA1 |
| Series | — | OptiMOS 5 |
| Continuous Drain Current (ID, Ta) | — | 42 A |
| Continuous Drain Current (ID, Tc) | — | 447 A |
| On-State Resistance (RDS(on)) | — | 0.7 mOhm at VGS = 10 V |
| Gate-Source Voltage (VGS) | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) | — | 1.7 V |
| Total Gate Charge (Qg) | — | 76 nC |
| Input Capacitance (Ciss) | — | 11 nF |
| Output Capacitance (Coss) | — | 2 nF |
| Reverse Transfer Capacitance (Crss) | — | 95 pF |
| Rentang Suhu Kerja | — | -55 C to +175 C |