IQDH29NE2LM5CGSCATMA1 vs IQDH88N06LM5SCATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IQDH29NE2LM5CGSCATMA1 sa pamamagitan ng Infineon at IQDH88N06LM5SCATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IQDH29NE2LM5CGSCATMA1 IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΩ MOSFET | Infineon

IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΩ MOSFET | Infineon

IQDH29NE2LM5CGSCATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IQDH29NE2LM5CGSCATMA1 IQDH88N06LM5SCATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Technology OptiMOS 5 Power-Transistor N-Channel MOSFET (OptiMOS 5)
Drain-Source Voltage (VDS) 25 V 60 V
Continuous Drain Current (Ta) 75 A —
Continuous Drain Current (Tc) 789 A —
Power Dissipation (Ta) 2.5 W 3 W
Power Dissipation (Tc) 278 W 333 W
Maximum On-Resistance RDS(on) 0.29 mΩ —
Gate Threshold Voltage VGS(th) 2 V (typ) —
Packhaging PG-WHTFN-9-U02 (WHTFN EP) PG-WHSON-8-U02 (source-down, dual-side cooling)
Bilang ng Pin 9 —
Uri ng Pagpapasok Surface Mount Surface Mount
Cooling Dual-side exposed pad (top + bottom) —
Level ng MSL [DATA_NEEDED: MSL rating] —
Tindminan RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Part Number — IQDH88N06LM5SCATMA1
Series — OptiMOS 5
Continuous Drain Current (ID, Ta) — 42 A
Continuous Drain Current (ID, Tc) — 447 A
On-State Resistance (RDS(on)) — 0.7 mOhm at VGS = 10 V
Gate-Source Voltage (VGS) — +/- 20 V
Gate Threshold Voltage (VGS(th)) — 1.7 V
Total Gate Charge (Qg) — 76 nC
Input Capacitance (Ciss) — 11 nF
Output Capacitance (Coss) — 2 nF
Reverse Transfer Capacitance (Crss) — 95 pF
Hanay ng Temperature na Operasyon — -55 C to +175 C

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