IQDH29NE2LM5CGSCATMA1 vs IQDH88N06LM5SCATMA1 比較

詳細並排比較 IQDH29NE2LM5CGSCATMA1 由 Infineon 與 IQDH88N06LM5SCATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IQDH29NE2LM5CGSCATMA1 IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΩ MOSFET | Infineon

IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΩ MOSFET | Infineon

IQDH29NE2LM5CGSCATMA1 ✓ 啟用中

規格比較

參數 IQDH29NE2LM5CGSCATMA1 IQDH88N06LM5SCATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type N-Channel —
Technology OptiMOS 5 Power-Transistor N-Channel MOSFET (OptiMOS 5)
Drain-Source Voltage (VDS) 25 V 60 V
Continuous Drain Current (Ta) 75 A —
Continuous Drain Current (Tc) 789 A —
Power Dissipation (Ta) 2.5 W 3 W
Power Dissipation (Tc) 278 W 333 W
Maximum On-Resistance RDS(on) 0.29 mΩ —
Gate Threshold Voltage VGS(th) 2 V (typ) —
封裝 PG-WHTFN-9-U02 (WHTFN EP) PG-WHSON-8-U02 (source-down, dual-side cooling)
腳位數 9 —
安裝類型 Surface Mount Surface Mount
Cooling Dual-side exposed pad (top + bottom) —
MSL 等級 [DATA_NEEDED: MSL rating] —
RoHS 狀態 Compliant Compliant
Manufacturer — Infineon Technologies
Part Number — IQDH88N06LM5SCATMA1
Series — OptiMOS 5
Continuous Drain Current (ID, Ta) — 42 A
Continuous Drain Current (ID, Tc) — 447 A
On-State Resistance (RDS(on)) — 0.7 mOhm at VGS = 10 V
Gate-Source Voltage (VGS) — +/- 20 V
Gate Threshold Voltage (VGS(th)) — 1.7 V
Total Gate Charge (Qg) — 76 nC
Input Capacitance (Ciss) — 11 nF
Output Capacitance (Coss) — 2 nF
Reverse Transfer Capacitance (Crss) — 95 pF
工作溫度範圍 — -55 C to +175 C

資料表與資源

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