IQDH88N06LM5ATMA1 vs BSC050N04LSGATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IQDH88N06LM5ATMA1 sa pamamagitan ng Infineon at BSC050N04LSGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IQDH88N06LM5ATMA1 IQDH88N06LM5ATMA1 - 60V 447A 0.86mOhm N-FET | Infineon OptiMOS 5

IQDH88N06LM5ATMA1 - 60V 447A 0.86mOhm N-FET | Infineon OptiMOS 5

IQDH88N06LM5ATMA1 ✓ Nakahanda
Infineon
BSC050N04LSGATMA1 BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon

BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon

BSC050N04LSGATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IQDH88N06LM5ATMA1 BSC050N04LSGATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel N-Channel
Technology OptiMOS 5 (trench) OptiMOS 3 (trench MOSFET)
Drain-to-Source Voltage (VDS) 60 V 40 V
Gate-to-Source Voltage (VGS) [DATA_NEEDED: VGS max rating] ±20 V
Drain Current (ID) Continuous at Ta 42 A —
Drain Current (ID) Continuous at Tc 447 A —
RDS(on) Max at VGS=10V 0.86 mOhm —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 333 W —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: VGS(th) typ/min/max]
Packhaging PG-TSON-8-9 (PQFN 5x6) PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Hanay ng Temperature na Operasyon [DATA_NEEDED: TJ max] -55C to +150C
Tindminan RoHS Compliant Compliant
Level ng MSL [DATA_NEEDED: MSL rating] 1
Manufacturer Infineon Technologies —
Series OptiMOS 5 —
Continuous Drain Current at 25C (ID, Ta) — 18 A
Continuous Drain Current at 25C (ID, Tc) — 85 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current IDM]
Power Dissipation at Ta (PD) — 2.5 W
Power Dissipation at Tc (PD) — 57 W
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) max at VGS=10V]
On-State Resistance (RDS(on)) at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Avalanche Energy Rated — Yes (single-pulse avalanche)

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