IQDH88N06LM5ATMA1 vs BSC050N04LSGATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IQDH88N06LM5ATMA1 tarafından Infineon ve BSC050N04LSGATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IQDH88N06LM5ATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 5 (trench) | OptiMOS 3 (trench MOSFET) |
| Drain-to-Source Voltage (VDS) | 60 V | 40 V |
| Gate-to-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | ±20 V |
| Drain Current (ID) Continuous at Ta | 42 A | — |
| Drain Current (ID) Continuous at Tc | 447 A | — |
| RDS(on) Max at VGS=10V | 0.86 mOhm | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 333 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | [DATA_NEEDED: VGS(th) typ/min/max] |
| Paket | PG-TSON-8-9 (PQFN 5x6) | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Montaj Türü | Surface Mount | Surface Mount |
| İşletim Sıcaklığı Aralığı | [DATA_NEEDED: TJ max] | -55C to +150C |
| RoHS Durumu | Compliant | Compliant |
| MSL Seviyesi | [DATA_NEEDED: MSL rating] | 1 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 | — |
| Continuous Drain Current at 25C (ID, Ta) | — | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | — | 85 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current IDM] |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 57 W |
| On-State Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Avalanche Energy Rated | — | Yes (single-pulse avalanche) |