IQE220N15NM5CGSCATMA1 vs IQE050N08NM5CGSCATMA1 Perbandingan
Perbandingan bersamaan detil IQE220N15NM5CGSCATMA1 dari Infineon dan IQE050N08NM5CGSCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IQE220N15NM5CGSCATMA1 - 150V 44A OptiMOS 5 N-MOSFET | Infineon
IQE220N15NM5CGSCATMA1 ✓ AktifInfineon
IQE050N08NM5CGSCATMA1 - 80V 99A OptiMOS 5 N-Channel MOSFET | Infineon
IQE050N08NM5CGSCATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IQE220N15NM5CGSCATMA1 | IQE050N08NM5CGSCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 | — |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 150 V | 80 V |
| Continuous Drain Current at Ta (ID) | 7 A | — |
| Continuous Drain Current at Tc (ID) | 44 A | — |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 100 W | — |
| On-Resistance (RDS(on)) | 22 milliohm (max) | — |
| Gate Threshold Voltage (VGS(th)) | 4.6 V | — |
| Paket | PG-WHTFN-9 (Source-Down) | PG-WHTFN-9-1 (Source-Down) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | OptiMOS 5, Source-Down | OptiMOS 5 (trench) |
| Rentang Suhu Kerja | -55C to +150C (junction) | -55C to +175C (junction, typical) |
| Status RoHS | Compliant | — |
| Continuous Drain Current (ID) at TC | — | 99 A |
| Continuous Drain Current (ID) at TA | — | 16 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 5.0 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 3.8 V |
| Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge] |
| Total Power Dissipation at TC (PD) | — | 100 W |
| Total Power Dissipation at TA (PD) | — | 2.5 W |
| Lead-Free / RoHS | — | Lead-free, RoHS compliant |
| Level MSL | — | 1 |