IQEH50NE2LM7ZCGATMA1 vs ISC009N06NM6ATMA1 Comparison

Detailed side-by-side comparison of IQEH50NE2LM7ZCGATMA1 by Infineon and ISC009N06NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC009N06NM6ATMA1 ISC009N06NM6ATMA1 - 60V 40A OptiMOS 6 N-FET | Infineon

ISC009N06NM6ATMA1 - 60V 40A OptiMOS 6 N-FET | Infineon

ISC009N06NM6ATMA1 ✓ Active

Specification Comparison

Parameter IQEH50NE2LM7ZCGATMA1 ISC009N06NM6ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 Power-Transistor OptiMOS 6 60 V
Polarity / Channel Type N-Channel —
Drain-Source Voltage (Vds) Max 25 V —
Continuous Drain Current (Ta) 54 A —
Continuous Drain Current (Tc) 422 A —
Maximum On-Resistance (Rds(on)) 0.5 mOhm —
Gate Threshold Voltage (Vgs(th)) 1.7 V —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 150 W —
Maximum Junction Temperature +175 degrees C —
Operating Temperature Range -55 degrees C to +175 degrees C -55 °C to +175 °C
Package PG-TTFN-9-3 PG-TDSON-8 (3.3 x 3.3 mm)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 7 (Trench-Gate) —
RoHS Status Compliant Compliant
Qualification Industrial grade per Infineon datasheet —
Transistor Type — N-Channel MOSFET
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Ta=25C — 40 A
Pulsed Drain Current (IDM) at Tc=25C — 344 A
Power Dissition (PD) at Ta=25C — 3 W
Power Dissipation (PD) at Tc=25C — 221 W
Gate-to-Source Voltage (VGS) — ±20 V
RDS(on) max @ VGS=10 V — [DATA_NEEDED: RDS(on) typical value at VGS=10 V]
Gate Charge (Qg, typ) — [DATA_NEEDED: Qg typical value]
MSL Level — MSL1 (per JEDEC J-STD-020)
Halogen Free — Yes
AEC-Q101 Qualification — [DATA_NEEDED: AEC-Q101 status]

Datasheets & Resources

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