IQEH50NE2LM7ZCGATMA1 vs ISC009N06NM6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQEH50NE2LM7ZCGATMA1 disebabkan oleh Infineon dan ISC009N06NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | IQEH50NE2LM7ZCGATMA1 | ISC009N06NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | OptiMOS 6 60 V |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (Vds) Max | 25 V | — |
| Continuous Drain Current (Ta) | 54 A | — |
| Continuous Drain Current (Tc) | 422 A | — |
| Maximum On-Resistance (Rds(on)) | 0.5 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 1.7 V | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 150 W | — |
| Maximum Junction Temperature | +175 degrees C | — |
| Gambaran Suhu Operasi | -55 degrees C to +175 degrees C | -55 °C to +175 °C |
| Kemasan | PG-TTFN-9-3 | PG-TDSON-8 (3.3 x 3.3 mm) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS 7 (Trench-Gate) | — |
| Status RoHS | Compliant | Compliant |
| Qualification | Industrial grade per Infineon datasheet | — |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Ta=25C | — | 40 A |
| Pulsed Drain Current (IDM) at Tc=25C | — | 344 A |
| Power Dissition (PD) at Ta=25C | — | 3 W |
| Power Dissipation (PD) at Tc=25C | — | 221 W |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| RDS(on) max @ VGS=10 V | — | [DATA_NEEDED: RDS(on) typical value at VGS=10 V] |
| Gate Charge (Qg, typ) | — | [DATA_NEEDED: Qg typical value] |
| Aras MSL | — | MSL1 (per JEDEC J-STD-020) |
| Boson Bebas | — | Yes |
| AEC-Q101 Qualification | — | [DATA_NEEDED: AEC-Q101 status] |