IQEH50NE2LM7ZCGATMA1 vs ISC009N06NM6ATMA1 Perbandingan

Perbandingan bersamaan detil IQEH50NE2LM7ZCGATMA1 dari Infineon dan ISC009N06NM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
ISC009N06NM6ATMA1 ISC009N06NM6ATMA1 - 60V 40A OptiMOS 6 N-FET | Infineon

ISC009N06NM6ATMA1 - 60V 40A OptiMOS 6 N-FET | Infineon

ISC009N06NM6ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IQEH50NE2LM7ZCGATMA1 ISC009N06NM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 Power-Transistor OptiMOS 6 60 V
Polarity / Channel Type N-Channel —
Drain-Source Voltage (Vds) Max 25 V —
Continuous Drain Current (Ta) 54 A —
Continuous Drain Current (Tc) 422 A —
Maximum On-Resistance (Rds(on)) 0.5 mOhm —
Gate Threshold Voltage (Vgs(th)) 1.7 V —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 150 W —
Maximum Junction Temperature +175 degrees C —
Rentang Suhu Kerja -55 degrees C to +175 degrees C -55 °C to +175 °C
Paket PG-TTFN-9-3 PG-TDSON-8 (3.3 x 3.3 mm)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS 7 (Trench-Gate) —
Status RoHS Compliant Compliant
Qualification Industrial grade per Infineon datasheet —
Tipe Transistor — N-Channel MOSFET
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at Ta=25C — 40 A
Pulsed Drain Current (IDM) at Tc=25C — 344 A
Power Dissition (PD) at Ta=25C — 3 W
Power Dissipation (PD) at Tc=25C — 221 W
Gate-to-Source Voltage (VGS) — ±20 V
RDS(on) max @ VGS=10 V — [DATA_NEEDED: RDS(on) typical value at VGS=10 V]
Gate Charge (Qg, typ) — [DATA_NEEDED: Qg typical value]
Level MSL — MSL1 (per JEDEC J-STD-020)
Bebas Halogen — Yes
AEC-Q101 Qualification — [DATA_NEEDED: AEC-Q101 status]

Spek dan Sumber

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