IQEH84NE2LM7UCGATMA1 vs IQDH29NE2LM5CGSCATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQEH84NE2LM7UCGATMA1 disebabkan oleh Infineon dan IQDH29NE2LM5CGSCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQEH84NE2LM7UCGATMA1 IQEH84NE2LM7UCGATMA1 - 25V OptiMOS 7 N-FET, 275A | Infineon

IQEH84NE2LM7UCGATMA1 - 25V OptiMOS 7 N-FET, 275A | Infineon

IQEH84NE2LM7UCGATMA1 ✓ Aktif
Infineon
IQDH29NE2LM5CGSCATMA1 IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΩ MOSFET | Infineon

IQDH29NE2LM5CGSCATMA1 - 25V N-Ch 0.29mΩ MOSFET | Infineon

IQDH29NE2LM5CGSCATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQEH84NE2LM7UCGATMA1 IQDH29NE2LM5CGSCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Technology OptiMOS 7 (Trench MOSFET) OptiMOS 5 Power-Transistor
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (ID) at Ta 42 A —
Pulsed Drain Current (IDM) at Tc 275 A —
Power Dissipation (PD) at Ta 2.5 W —
Power Dissipation (PD) at Tc 107 W —
RDS(on) @ VGS=10 V [DATA_NEEDED: RDS(on) at 10 V] —
RDS(on) @ VGS=4.5 V [DATA_NEEDED: RDS(on) at 4.5 V] —
Suhu Hubungan Operasi -55 C to +175 C —
Kemasan PG-TTFN-9-3 (surface mount, source-down) PG-WHTFN-9-U02 (WHTFN EP)
Jenis Pemasangan Surface Mount Surface Mount
Kiraan Pin [DATA_NEEDED: pin count from datasheet pinout] 9
Status RoHS Compliant Compliant
Lead-Free Yes —
Switching Application Hard- and soft-switching —
Continuous Drain Current (Ta) — 75 A
Continuous Drain Current (Tc) — 789 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 278 W
Maximum On-Resistance RDS(on) — 0.29 mΩ
Gate Threshold Voltage VGS(th) — 2 V (typ)
Cooling — Dual-side exposed pad (top + bottom)
Aras MSL — [DATA_NEEDED: MSL rating]

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