IQEH84NE2LM7UCGATMA1 vs IQDH29NE2LM5CGSCATMA1 Perbandingan
Perbandingan bersamaan detil IQEH84NE2LM7UCGATMA1 dari Infineon dan IQDH29NE2LM5CGSCATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IQEH84NE2LM7UCGATMA1 | IQDH29NE2LM5CGSCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Technology | OptiMOS 7 (Trench MOSFET) | OptiMOS 5 Power-Transistor |
| Drain-Source Voltage (VDS) | 25 V | 25 V |
| Continuous Drain Current (ID) at Ta | 42 A | — |
| Pulsed Drain Current (IDM) at Tc | 275 A | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Power Dissipation (PD) at Tc | 107 W | — |
| RDS(on) @ VGS=10 V | [DATA_NEEDED: RDS(on) at 10 V] | — |
| RDS(on) @ VGS=4.5 V | [DATA_NEEDED: RDS(on) at 4.5 V] | — |
| Suhu Hubung Kerja | -55 C to +175 C | — |
| Paket | PG-TTFN-9-3 (surface mount, source-down) | PG-WHTFN-9-U02 (WHTFN EP) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Jumlah Pin | [DATA_NEEDED: pin count from datasheet pinout] | 9 |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Switching Application | Hard- and soft-switching | — |
| Continuous Drain Current (Ta) | — | 75 A |
| Continuous Drain Current (Tc) | — | 789 A |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 278 W |
| Maximum On-Resistance RDS(on) | — | 0.29 mΩ |
| Gate Threshold Voltage VGS(th) | — | 2 V (typ) |
| Cooling | — | Dual-side exposed pad (top + bottom) |
| Level MSL | — | [DATA_NEEDED: MSL rating] |