IR2101STRPBF vs IRS2101STRPBF Comparison

Detailed side-by-side comparison of IR2101STRPBF by Infineon and IRS2101STRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IR2101STRPBF IRS2101STRPBF
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.68 $1.18
Configuration Half-Bridge (High-Side and Low-Side), Independent —
Number of Drivers 2 2
Driver Type Non-Inverting High-Side, Low-Side (Half-Bridge)
Maximum Offset Voltage 600 V 600 V
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Source Current (Typ.) 210 mA —
Sink Current (Typ.) 360 mA —
Propagation Delay (Typ.) 160 ns —
Rise Time (Typ.) [DATA_NEEDED: rise time] —
Fall Time (Typ.) [DATA_NEEDED: fall time] —
Logic Input Compatibility 3.3 V / 5 V / 15 V CMOS/LSTTL 3.3 V / 5 V / 15 V
Bootstrap Diode Integrated —
Undervoltage Lockout (UVLO) Yes (VCC and VBS) —
Negative Transient Immunity on VS Yes (dV/dt immune) —
Package 8-SOIC (0.154 inch, 3.90 mm Width) 8-SOIC (SOIC-8)
Mounting Type Surface Mount Surface Mount
Operating Temperature -40 C to +125 C -40C to +125C
MSL Level MSL 3 —
RoHS Status Compliant Compliant (PBF suffix)
Number of Outputs — 2-OUT
Output Configuration — Non-Inverting
Gate Drive Supply (VCC) — 10 V to 20 V
Bootstrap Supply (VBS) — 10 V to 20 V
Source Current (typical) — 0.29 A
Sink Current (typical) — 0.6 A
VS Transient Range — -5 V to +600 V (logic operational)
Undervoltage Lockout — Yes (VCC and VBS)
Propagation Delay Matching — Matched both channels
dV/dt Immunity — Yes (latch-immune CMOS)
Packaging — Tape & Reel (TRPBF)
Technology — HVIC + latch-immune CMOS

Datasheets & Resources

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