IR2101STRPBF vs IRS2101STRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IR2101STRPBF sa pamamagitan ng Infineon at IRS2101STRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IR2101STRPBF IRS2101STRPBF
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Configuration Half-Bridge (High-Side and Low-Side), Independent —
Number of Drivers 2 2
Driver Type Non-Inverting High-Side, Low-Side (Half-Bridge)
Maximum Offset Voltage 600 V 600 V
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Source Current (Typ.) 210 mA —
Sink Current (Typ.) 360 mA —
Propagation Delay (Typ.) 160 ns —
Rise Time (Typ.) [DATA_NEEDED: rise time] —
Fall Time (Typ.) [DATA_NEEDED: fall time] —
Logic Input Compatibility 3.3 V / 5 V / 15 V CMOS/LSTTL 3.3 V / 5 V / 15 V
Bootstrap Diode Integrated —
Undervoltage Lockout (UVLO) Yes (VCC and VBS) —
Negative Transient Immunity on VS Yes (dV/dt immune) —
Packhaging 8-SOIC (0.154 inch, 3.90 mm Width) 8-SOIC (SOIC-8)
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon -40 C to +125 C -40C to +125C
Level ng MSL MSL 3 —
Tindminan RoHS Compliant Compliant (PBF suffix)
Bilang ng Outputs — 2-OUT
Output Kumpigurasyon — Non-Inverting
Gate Drive Supply (VCC) — 10 V to 20 V
Bootstrap Supply (VBS) — 10 V to 20 V
Source Current (typical) — 0.29 A
Sink Current (typical) — 0.6 A
VS Transient Range — -5 V to +600 V (logic operational)
Undervoltage Lockout — Yes (VCC and VBS)
Propagation Delay Matching — Matched both channels
dV/dt Immunity — Yes (latch-immune CMOS)
Packaging — Tape & Reel (TRPBF)
Technology — HVIC + latch-immune CMOS

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