IRS2101STRPBF - 600V High/Low-Side Gate Driver IC | Infineon
MPN: IRS2101STRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.66 | $16.60 |
| 100 | $1.48 | $148.00 |
| 500 | $1.32 | $660.00 |
| 1,000 | $1.18 | $1,180.00 |
Drop-in alternatives for IRS2101STRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRS2101SPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS2104STRPBF
β Drop-Inβ In Stock
$0.45 / Unit
View Datasheet βIRS21091STRPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS21271STRPBF
β Drop-Inβ In Stock
$1.02 / Unit
View Datasheet βFAN7390
β Drop-Inπ Reference alternative (not in catalog)
IRS2011STRPBF
β Drop-Inβ In Stock
$1.55 / Unit
View Datasheet βIRS2101STRPBF Maximum Ratings & Electrical Characteristics
| Driver Type | High-Side, Low-Side (Half-Bridge) |
| Number of Drivers | 2 |
| Number of Outputs | 2-OUT |
| Output Configuration | Non-Inverting |
| Maximum Offset Voltage | 600 V |
| Gate Drive Supply (VCC) | 10 V to 20 V |
| Bootstrap Supply (VBS) | 10 V to 20 V |
| Source Current (typical) | 0.29 A |
| Sink Current (typical) | 0.6 A |
| Logic Input Compatibility | 3.3 V / 5 V / 15 V |
| VS Transient Range | -5 V to +600 V (logic operational) |
| Undervoltage Lockout | Yes (VCC and VBS) |
| Propagation Delay Matching | Matched both channels |
| dV/dt Immunity | Yes (latch-immune CMOS) |
| Operating Temperature | -40C to +125C |
| Package | 8-SOIC (SOIC-8) |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (TRPBF) |
| Technology | HVIC + latch-immune CMOS |
| RoHS Status | Compliant (PBF suffix) |
IRS2101STRPBF Pin Configuration
| Pin 1 | VCC β Logic and low-side supply (10 V to 20 V) |
| Pin 2 | IN β Logic input for high-side (3.3 V/5 V/15 V compatible) |
| Pin 3 | SD β Shutdown input (active-low) |
| Pin 4 | COM β Low-side return / ground |
| Pin 5 | LO β Low-side gate drive output |
| Pin 6 | VS β High-side floating supply return (sits at switched node) |
| Pin 7 | HO β High-side gate drive output |
| Pin 8 | VB β High-side floating supply (bootstrap) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
IRS2101STRPBF is suitable for 8 applications: BLDC / PMSM Motor Drive, Switch-Mode Power Supply (SMPS), Solar Micro-Inverter, Electronic Ballast / HID Lighting, Class-D Audio Amplifier, Uninterruptible Power Supply (UPS), Induction Heating Cooktop, Battery-Powered E-Bike / E-Scooter Controller.
BLDC / PMSM Motor Drive
The IRS2101STRPBF is widely used as the half-bridge gate driver in 3-phase BLDC and PMSM motor drives up to ~500 W. Its 600 V rating covers rectified 110/230 VAC bus rails (~325 VDC), and the 0.6 A sink current switches MOSFETs in the 50-200 nC Qg range at up to 50 kHz PWM. Bootstrap operation on the high side eliminates the need for an isolated supply per phase. Matched propagation delay keeps the high-side and low-side transitions synchronized, minimizing dead-time distortion and audible switching noise in FOC sine drives.
Recommended
Switch-Mode Power Supply (SMPS)
In half-bridge and full-bridge SMPS topologies, the IRS2101STRPBF drives the primary-side MOSFETs of telecom and industrial DC-DC converters. Its 600 V withstand handles 380 VDC bus rails comfortably, while the 10-20 V VCC range allows direct drive from 12 V or 15 V auxiliary rails. The 3.3 V/5 V logic input compatibility means no level shifters are needed between an MCU/digital controller and the driver. Undervoltage lockout on both VCC and VBS prevents catastrophic half-bridge shoot-through during start-up and brown-out conditions.
Recommended
Solar Micro-Inverter
Grid-tied solar micro-inverters in the 200-600 W range use the IRS2101STRPBF to drive the H-bridge that converts 30-60 VDC panel output to 110/230 VAC. Its 600 V rating exceeds the rectified peak of 230 VAC (~325 V), and the half-bridge topology pairs two IRS2101s to form a full H-bridge for transformer-isolated topologies. The latch-immune CMOS construction ensures long-term reliability in outdoor solar installations subject to temperature cycling and humidity. Bootstrapping keeps the bill of materials low compared to gate-drive transformers.
Recommended
Electronic Ballast / HID Lighting
Fluorescent and HID lamp ballasts use the IRS2101STRPBF to drive the half-bridge resonant inverter that ignites and sustains the arc. The 600 V rating handles the high-voltage lamp strike transient, and the 0.6 A sink current drives MOSFETs fast enough for 30-100 kHz resonant operation. UVLO protects the lamp and ballast during warm-up, while dV/dt immunity eliminates false triggering from the steep switching edges common in resonant topologies. The 8-SOIC footprint fits compact CFL-replacement ballasts.
Recommended
Class-D Audio Amplifier
Open-loop and closed-loop Class-D audio amplifiers use the IRS2101STRPBF in the output H-bridge that drives the loudspeaker load. Its 600 V rating allows direct connection to PFC-boosted 400 V rails in high-power professional audio. Matched propagation delay (within tens of nanoseconds across both channels) keeps the high-side and low-side transitions aligned, minimizing dead-time and THD distortion. The 3.3 V logic compatibility interfaces directly to common audio DSP modulators without level shifting.
Uninterruptible Power Supply (UPS)
In on-line and line-interactive UPS systems, the IRS2101STRPBF drives the half-bridge inverter stage that converts the battery DC bus back to 110/230 VAC during grid outages. The 600 V rating handles the rectified mains bus, while UVLO prevents cross-conduction during battery reconnect events. The 0.6 A sink current drives IGBTs in the 5-20 A class at 16-25 kHz switching frequency. The 8-SOIC package is small enough to fit compact 500 VA-1 kVA UPS enclosures without sacrificing thermal margin.
Recommended
Induction Heating Cooktop
Resonant half-bridge induction heating cooktops operate at 20-50 kHz and use the IRS2101STRPBF to switch the high-voltage IGBTs that drive the induction coil. The 600 V rating covers the rectified 220 VAC mains bus, and the 0.6 A sink current is sufficient for cooktop-class IGBTs in the 20-40 A range. Latch-immune CMOS withstands the high dV/dt of the resonant tank, and the SOIC-8 footprint simplifies the low-cost PCB layout required for consumer cooktop volumes.
Recommended
Battery-Powered E-Bike / E-Scooter Controller
E-bike and e-scooter motor controllers running from 36 V / 48 V battery packs use the IRS2101STRPBF as the half-bridge driver in 3-phase inverter modules. While the 600 V rating is far above the 48 V battery voltage, designers choose it for the ruggedized HVIC construction and reliable bootstrap operation. The 0.6 A sink current drives MOSFETs that handle 20-40 A phase currents. The 8-SOIC package is small enough for IPM-style compact motor controller enclosures.
Recommended
Recommended Products Summary
Engineering reference data for IRS2101STRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRS2101SPBF | IRS2104STRPBF | IRS21091STRPBF | IRS21271STRPBF | FAN7390 | IRS2011STRPBF |
|---|---|---|---|---|---|---|---|
| Package | 8-SOIC | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | onsemi | Infineon |
| Offset Voltage (max) | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V | 200 V |
| Source Current (typ) | 0.29 A | 0.29 A | 0.29 A | ~0.6 A | [DATA_NEEDED] | 0.35 A | 1.0 A |
| Sink Current (typ) | 0.6 A | 0.6 A | 0.6 A | ~1.0 A | [DATA_NEEDED] | 0.65 A | 1.0 A |
| VCC/VBS Supply Range | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V |
| Logic Input Compatibility | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V | 3.3 V / 5 V / 15 V | 3.3 V / 5 V | 3.3 V / 5 V / 15 V |
| UVLO | Yes (VCC + VBS) | Yes | Yes | Yes | Yes | Yes | Yes |
| Shutdown Pin | Yes (SD, active-low) | Yes | Yes | Yes | Yes | Yes | Yes |
| Unit Price (qty 1000) | $1.18 | ~$1.18 (tube) | ~$1.45 | ~$1.95 | ~$1.65 | ~$1.30 | ~$1.55 |
Key Differentiators
- 600 V offset rating with proven HVIC monolithic construction (vs IRS2011STRPBF)
- Matched propagation delay keeps channels in phase (vs IRS2181STRPBF)
- 3.3 V logic input compatibility without level shifters (vs FAN7390)
- Larger Infineon ecosystem and longer track record (vs FAN7390)
Design Notes
Estimated: At VBUS = 325 VDC, VCC = 15 V, and 100 kHz switching with Qg = 100 nC MOSFETs, the IRS2101STRPBF draws approximately 1.5 mA average from VCC for gate charge, plus quiescent current. The bootstrap capacitor must be sized using the rule C_BS > Qg_total / ΞV_BS where ΞV_BS is the allowable droop (typically 0.1-0.5 V). For 100 nC total gate charge and 0.2 V droop, C_BS β₯ 0.5 Β΅F; design with 1 Β΅F X7R ceramic for margin. Refresh the bootstrap charge every PWM cycle via a fast-recovery diode (e.g. UF4007 or Schottky) rated above VBUS_max.
Keep the high-side gate-drive loop (HO, VS, and the bootstrap capacitor) as physically small as possible - ideally under 1 cmΒ² of loop area. Place the bootstrap capacitor and diode directly adjacent to pins 6 (VS) and 8 (VB). Use a ground plane on the COM side (pin 4) that ties back to the power-stage ground at a single point. For high dV/dt switching nodes (>5 V/ns), guard the VS trace with a ground pour to prevent capacitive coupling into the floating supply that could cause false HO triggering.
Do not operate the high side without VB charged - if the bootstrap capacitor is depleted (long off-time or 100% duty cycle), the high-side gate will collapse and cause a half-bridge shoot-through. For 100% duty-cycle operation, an isolated DC-DC supply (bootstrap refresh circuit) or charge pump is required. Also, do not exceed VS = -5 V to +600 V; consult Infineon Design Tip DT97-3 for recommended TVS diode selection on the VS node if negative transients beyond -5 V are expected during commutation.
The IRS2101STRPBF in 8-SOIC has a theta_JA of approximately 100-130 C/W depending on PCB copper area (per JEDEC EIA/JESD51 standards). At 5 mA quiescent current and 15 V VCC, the device dissipates only ~75 mW internally, so thermal management is not a concern for the driver itself. However, the adjacent power MOSFETs may heat the PCB locally; ensure the SOIC-8 driver is placed at least 5 mm away from the power-stage heatsink to avoid thermally-induced reliability degradation.
Compliance Information
PBF suffix indicates lead-free and RoHS-compliant. AEC-Q100 grade not qualified; for automotive gate drivers choose IRS2101STRPBF-Q1 or AEC-Q100-qualified Infineon parts.
