IR2101STRPBF vs IRS2101STRPBF Perbandingan

Perbandingan bersamaan detil IR2101STRPBF dari Infineon dan IRS2101STRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IR2101STRPBF IRS2101STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Configuration Half-Bridge (High-Side and Low-Side), Independent —
Number of Drivers 2 2
Driver Type Non-Inverting High-Side, Low-Side (Half-Bridge)
Maximum Offset Voltage 600 V 600 V
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Source Current (Typ.) 210 mA —
Sink Current (Typ.) 360 mA —
Propagation Delay (Typ.) 160 ns —
Rise Time (Typ.) [DATA_NEEDED: rise time] —
Fall Time (Typ.) [DATA_NEEDED: fall time] —
Logic Input Compatibility 3.3 V / 5 V / 15 V CMOS/LSTTL 3.3 V / 5 V / 15 V
Bootstrap Diode Integrated —
Undervoltage Lockout (UVLO) Yes (VCC and VBS) —
Negative Transient Immunity on VS Yes (dV/dt immune) —
Paket 8-SOIC (0.154 inch, 3.90 mm Width) 8-SOIC (SOIC-8)
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -40 C to +125 C -40C to +125C
Level MSL MSL 3 —
Status RoHS Compliant Compliant (PBF suffix)
Jumlah Output — 2-OUT
Konfigurasi Output — Non-Inverting
Gate Drive Supply (VCC) — 10 V to 20 V
Bootstrap Supply (VBS) — 10 V to 20 V
Source Current (typical) — 0.29 A
Sink Current (typical) — 0.6 A
VS Transient Range — -5 V to +600 V (logic operational)
Undervoltage Lockout — Yes (VCC and VBS)
Propagation Delay Matching — Matched both channels
dV/dt Immunity — Yes (latch-immune CMOS)
Packaging — Tape & Reel (TRPBF)
Technology — HVIC + latch-immune CMOS

Spek dan Sumber

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