IR2101STRPBF vs IRS2101STRPBF 비교

다음의 상세 나란히 비교: IR2101STRPBF 제조: Infineon 및 IRS2101STRPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 IR2101STRPBF IRS2101STRPBF
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $0.68 $1.18
Configuration Half-Bridge (High-Side and Low-Side), Independent —
Number of Drivers 2 2
Driver Type Non-Inverting High-Side, Low-Side (Half-Bridge)
Maximum Offset Voltage 600 V 600 V
Gate Drive Supply Voltage (VCC) 10 V to 20 V —
Source Current (Typ.) 210 mA —
Sink Current (Typ.) 360 mA —
Propagation Delay (Typ.) 160 ns —
Rise Time (Typ.) [DATA_NEEDED: rise time] —
Fall Time (Typ.) [DATA_NEEDED: fall time] —
Logic Input Compatibility 3.3 V / 5 V / 15 V CMOS/LSTTL 3.3 V / 5 V / 15 V
Bootstrap Diode Integrated —
Undervoltage Lockout (UVLO) Yes (VCC and VBS) —
Negative Transient Immunity on VS Yes (dV/dt immune) —
패키지 8-SOIC (0.154 inch, 3.90 mm Width) 8-SOIC (SOIC-8)
실장 유형 Surface Mount Surface Mount
동작 온도 -40 C to +125 C -40C to +125C
MSL 레벨 MSL 3 —
RoHS 상태 Compliant Compliant (PBF suffix)
출력 수 — 2-OUT
출력 구성 — Non-Inverting
Gate Drive Supply (VCC) — 10 V to 20 V
Bootstrap Supply (VBS) — 10 V to 20 V
Source Current (typical) — 0.29 A
Sink Current (typical) — 0.6 A
VS Transient Range — -5 V to +600 V (logic operational)
Undervoltage Lockout — Yes (VCC and VBS)
Propagation Delay Matching — Matched both channels
dV/dt Immunity — Yes (latch-immune CMOS)
Packaging — Tape & Reel (TRPBF)
Technology — HVIC + latch-immune CMOS

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