IRF4905STRLPBF vs IRF9540NSTRLPBF Comparison

Detailed side-by-side comparison of IRF4905STRLPBF by Infineon and IRF9540NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRF9540NSTRLPBF IRF9540NSTRLPBF - 100V P-Ch 23A MOSFET, 117mOhm | Infineon

IRF9540NSTRLPBF - 100V P-Ch 23A MOSFET, 117mOhm | Infineon

IRF9540NSTRLPBF βœ“ Active

Specification Comparison

Parameter IRF4905STRLPBF IRF9540NSTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.95 $0.58
FET Type P-Channel β€”
Drain-Source Voltage (VDS) -55 V β€”
Continuous Drain Current (ID) at Tc=25C -74 A β€”
Pulsed Drain Current (IDM) -260 A β€”
Gate-Source Voltage (VGS) max Β±20 V β€”
On-Resistance RDS(on) at VGS=-10V 20 mOhm β€”
Total Gate Charge (Qg) 120 nC 64.7 nC
Power Dissipation (PD) at Tc=25C 170 W β€”
Operating Temperature Range -55C to +175C β€”
Package D2PAK (TO-263) D2PAK (TO-263), surface mount
Mounting Type Surface Mount Surface Mount
Technology HEXFET (Planar) HEXFET, Advanced Process
MSL Level 1 β€”
RoHS Status Compliant β€”
Lead-Free Yes β€”
Manufacturer β€” Infineon (formerly International Rectifier)
Product Type β€” Single P-Channel Power MOSFET (HEXFET)
Drain-Source Voltage (Vdss) β€” -100 V
Continuous Drain Current (Id) β€” -23 A (at Tc)
On-Resistance (Rds(on)) β€” 117 mOhm max
Power Dissipation (Ta) β€” 3.1 W
Power Dissipation (Tc) β€” 110 W
Polarity β€” P-Channel
Operating Mode β€” Enhancement-mode
Avalanche Rated β€” Yes
Lead Finish β€” Pb-free, RoHS-compliant
Shipping Media β€” Tape and Reel (TR suffix)

Datasheets & Resources

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