IRF4905STRLPBF vs IRF9540NSTRLPBF 比較
詳細並排比較 IRF4905STRLPBF 由 Infineon 與 IRF9540NSTRLPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF4905STRLPBF | IRF9540NSTRLPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at Tc=25C | -74 A | — |
| Pulsed Drain Current (IDM) | -260 A | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| On-Resistance RDS(on) at VGS=-10V | 20 mOhm | — |
| Total Gate Charge (Qg) | 120 nC | 64.7 nC |
| Power Dissipation (PD) at Tc=25C | 170 W | — |
| 工作溫度範圍 | -55C to +175C | — |
| 封裝 | D2PAK (TO-263) | D2PAK (TO-263), surface mount |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | HEXFET (Planar) | HEXFET, Advanced Process |
| MSL 等級 | 1 | — |
| RoHS 狀態 | Compliant | — |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon (formerly International Rectifier) |
| Product Type | — | Single P-Channel Power MOSFET (HEXFET) |
| Drain-Source Voltage (Vdss) | — | -100 V |
| Continuous Drain Current (Id) | — | -23 A (at Tc) |
| On-Resistance (Rds(on)) | — | 117 mOhm max |
| Power Dissipation (Ta) | — | 3.1 W |
| Power Dissipation (Tc) | — | 110 W |
| Polarity | — | P-Channel |
| Operating Mode | — | Enhancement-mode |
| Avalanche Rated | — | Yes |
| Lead Finish | — | Pb-free, RoHS-compliant |
| Shipping Media | — | Tape and Reel (TR suffix) |