IRF4905STRLPBF vs IRF9540NSTRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF4905STRLPBF sa pamamagitan ng Infineon at IRF9540NSTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IRF9540NSTRLPBF IRF9540NSTRLPBF - 100V P-Ch 23A MOSFET, 117mOhm | Infineon

IRF9540NSTRLPBF - 100V P-Ch 23A MOSFET, 117mOhm | Infineon

IRF9540NSTRLPBF ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IRF4905STRLPBF IRF9540NSTRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type P-Channel —
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at Tc=25C -74 A —
Pulsed Drain Current (IDM) -260 A —
Gate-Source Voltage (VGS) max ±20 V —
On-Resistance RDS(on) at VGS=-10V 20 mOhm —
Total Gate Charge (Qg) 120 nC 64.7 nC
Power Dissipation (PD) at Tc=25C 170 W —
Hanay ng Temperature na Operasyon -55C to +175C —
Packhaging D2PAK (TO-263) D2PAK (TO-263), surface mount
Uri ng Pagpapasok Surface Mount Surface Mount
Technology HEXFET (Planar) HEXFET, Advanced Process
Level ng MSL 1 —
Tindminan RoHS Compliant —
Lead-Free Yes —
Manufacturer — Infineon (formerly International Rectifier)
Product Type — Single P-Channel Power MOSFET (HEXFET)
Drain-Source Voltage (Vdss) — -100 V
Continuous Drain Current (Id) — -23 A (at Tc)
On-Resistance (Rds(on)) — 117 mOhm max
Power Dissipation (Ta) — 3.1 W
Power Dissipation (Tc) — 110 W
Polarity — P-Channel
Operating Mode — Enhancement-mode
Avalanche Rated — Yes
Lead Finish — Pb-free, RoHS-compliant
Shipping Media — Tape and Reel (TR suffix)

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