IRF4905STRLPBF vs IRF9540NSTRLPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF4905STRLPBF disebabkan oleh Infineon dan IRF9540NSTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF4905STRLPBF | IRF9540NSTRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at Tc=25C | -74 A | — |
| Pulsed Drain Current (IDM) | -260 A | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| On-Resistance RDS(on) at VGS=-10V | 20 mOhm | — |
| Total Gate Charge (Qg) | 120 nC | 64.7 nC |
| Power Dissipation (PD) at Tc=25C | 170 W | — |
| Gambaran Suhu Operasi | -55C to +175C | — |
| Kemasan | D2PAK (TO-263) | D2PAK (TO-263), surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | HEXFET (Planar) | HEXFET, Advanced Process |
| Aras MSL | 1 | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon (formerly International Rectifier) |
| Product Type | — | Single P-Channel Power MOSFET (HEXFET) |
| Drain-Source Voltage (Vdss) | — | -100 V |
| Continuous Drain Current (Id) | — | -23 A (at Tc) |
| On-Resistance (Rds(on)) | — | 117 mOhm max |
| Power Dissipation (Ta) | — | 3.1 W |
| Power Dissipation (Tc) | — | 110 W |
| Polarity | — | P-Channel |
| Operating Mode | — | Enhancement-mode |
| Avalanche Rated | — | Yes |
| Lead Finish | — | Pb-free, RoHS-compliant |
| Shipping Media | — | Tape and Reel (TR suffix) |