IRF7341GTRPBF vs IRF7103TRPBF Perbandingan
Perbandingan bersamaan detil IRF7341GTRPBF dari Infineon dan IRF7103TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF7341GTRPBF | IRF7103TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) | 5.1 A | 3 A |
| On-Resistance (RDS(on)) max | 50 mOhm at VGS=10V | — |
| Power Dissipation (PD) | 2.4 W | — |
| Maximum Junction Temperature | 175 C | — |
| Configuration | Dual N-Channel | Common Source, Dual Die |
| Technology | IR HEXFET Planar MOSFET | IR MOSFET™ (HEXFET equivalent) |
| Paket | 8-SO (SOIC-8) | SO-8 (PG-DSO-8-902) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | [DATA_NEEDED: VGS(th) value] |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Rentang Suhu Kerja | -55 C to +175 C | -55C to +150C (TJ) |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes (PBF suffix) | Yes (Pb-free per TRPBF suffix) |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF7103TRPBF |
| FET Type | — | Dual N-Channel |
| Drain-to-Source Voltage (VDS) | — | 50 V |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM value] |
| On-Resistance RDS(on) max | — | 130 mOhm @ VGS=10V |
| On-Resistance RDS(on) typ | — | 0.11 ohm |
| Total Power Dissipation (PD) | — | 2 W |
| Soldering Method | — | Vapour phase, infrared, wave soldering |
| Level MSL | — | 1 |