IRF7907TRPBF vs IRF9952TRPBF Comparison

Detailed side-by-side comparison of IRF7907TRPBF by Infineon and IRF9952TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRF9952TRPBF IRF9952TRPBF - Dual N+P 30V MOSFET Array, SO-8 | Infineon

IRF9952TRPBF - Dual N+P 30V MOSFET Array, SO-8 | Infineon

IRF9952TRPBF βœ“ Active

Specification Comparison

Parameter IRF7907TRPBF IRF9952TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.43 $0.32
Configuration Dual N-Channel MOSFET Array β€”
Drain-Source Voltage (VDS) Max 30 V β€”
Continuous Drain Current (ID) Max 9.1 A per channel at 25 C β€”
Pulsed Drain Current (IDM) Max 11 A β€”
On-Resistance (RDS(on)) Max 11.8 mOhm at VGS = 10 V β€”
Gate-Source Threshold Voltage (VGS(th)) 1.35 V (typ) β€”
Total Power Dissipation (PD) Max 2 W β€”
Operating Temperature Range -55 C to +150 C -55C to +150C (junction)
Package 8-SOIC (SO-8) 8-pin SOIC (SO-8), surface mount
Mounting Type Surface Mount Surface Mount
Technology IR MOSFET (Infineon hexfet-style trench) IR MOSFET / Fifth Generation HEXFET
Lead-Free Status Yes (PBF suffix) β€”
Packaging Tape & Reel (TR) β€”
RoHS Status Compliant Compliant (Pb-free, indicated by PBF suffix)
Channel Polarity N-Channel (both) β€”
Polarity / Configuration β€” Complementary N-Channel + P-Channel, dual MOSFET array
N-Channel VDS (Drain-Source Voltage) β€” 30 V
P-Channel VDS (Drain-Source Voltage) β€” -30 V
N-Channel Continuous Drain Current (ID) β€” 3.5 A
P-Channel Continuous Drain Current (ID) β€” 2.3 A
N-Channel R_DS(on) max β€” 0.10 ohm (at VGS = 10 V)
P-Channel R_DS(on) max β€” 0.25 ohm (at VGS = -10 V)
Total Package Power Dissipation (PD) β€” 2 W
Tape and Reel Packaging β€” Yes (TRPBF suffix)
Qualification β€” Consumer market

Datasheets & Resources

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