IRF7907TRPBF vs IRF9952TRPBF Perbandingan
Perbandingan bersamaan detil IRF7907TRPBF dari Infineon dan IRF9952TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRF7907TRPBF | IRF9952TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Configuration | Dual N-Channel MOSFET Array | — |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) Max | 9.1 A per channel at 25 C | — |
| Pulsed Drain Current (IDM) Max | 11 A | — |
| On-Resistance (RDS(on)) Max | 11.8 mOhm at VGS = 10 V | — |
| Gate-Source Threshold Voltage (VGS(th)) | 1.35 V (typ) | — |
| Total Power Dissipation (PD) Max | 2 W | — |
| Rentang Suhu Kerja | -55 C to +150 C | -55C to +150C (junction) |
| Paket | 8-SOIC (SO-8) | 8-pin SOIC (SO-8), surface mount |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | IR MOSFET (Infineon hexfet-style trench) | IR MOSFET / Fifth Generation HEXFET |
| Lead-Free Status | Yes (PBF suffix) | — |
| Packaging | Tape & Reel (TR) | — |
| Status RoHS | Compliant | Compliant (Pb-free, indicated by PBF suffix) |
| Channel Polarity | N-Channel (both) | — |
| Polarity / Configuration | — | Complementary N-Channel + P-Channel, dual MOSFET array |
| N-Channel VDS (Drain-Source Voltage) | — | 30 V |
| P-Channel VDS (Drain-Source Voltage) | — | -30 V |
| N-Channel Continuous Drain Current (ID) | — | 3.5 A |
| P-Channel Continuous Drain Current (ID) | — | 2.3 A |
| N-Channel R_DS(on) max | — | 0.10 ohm (at VGS = 10 V) |
| P-Channel R_DS(on) max | — | 0.25 ohm (at VGS = -10 V) |
| Total Package Power Dissipation (PD) | — | 2 W |
| Tape and Reel Packaging | — | Yes (TRPBF suffix) |
| Qualification | — | Consumer market |