IRF7907TRPBF vs IRF9952TRPBF 比較
詳細並排比較 IRF7907TRPBF 由 Infineon 與 IRF9952TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF7907TRPBF | IRF9952TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Configuration | Dual N-Channel MOSFET Array | — |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) Max | 9.1 A per channel at 25 C | — |
| Pulsed Drain Current (IDM) Max | 11 A | — |
| On-Resistance (RDS(on)) Max | 11.8 mOhm at VGS = 10 V | — |
| Gate-Source Threshold Voltage (VGS(th)) | 1.35 V (typ) | — |
| Total Power Dissipation (PD) Max | 2 W | — |
| 工作溫度範圍 | -55 C to +150 C | -55C to +150C (junction) |
| 封裝 | 8-SOIC (SO-8) | 8-pin SOIC (SO-8), surface mount |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | IR MOSFET (Infineon hexfet-style trench) | IR MOSFET / Fifth Generation HEXFET |
| Lead-Free Status | Yes (PBF suffix) | — |
| Packaging | Tape & Reel (TR) | — |
| RoHS 狀態 | Compliant | Compliant (Pb-free, indicated by PBF suffix) |
| Channel Polarity | N-Channel (both) | — |
| Polarity / Configuration | — | Complementary N-Channel + P-Channel, dual MOSFET array |
| N-Channel VDS (Drain-Source Voltage) | — | 30 V |
| P-Channel VDS (Drain-Source Voltage) | — | -30 V |
| N-Channel Continuous Drain Current (ID) | — | 3.5 A |
| P-Channel Continuous Drain Current (ID) | — | 2.3 A |
| N-Channel R_DS(on) max | — | 0.10 ohm (at VGS = 10 V) |
| P-Channel R_DS(on) max | — | 0.25 ohm (at VGS = -10 V) |
| Total Package Power Dissipation (PD) | — | 2 W |
| Tape and Reel Packaging | — | Yes (TRPBF suffix) |
| Qualification | — | Consumer market |