IRF7907TRPBF vs IRF9952TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRF7907TRPBF sa pamamagitan ng Infineon at IRF9952TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRF7907TRPBF | IRF9952TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Configuration | Dual N-Channel MOSFET Array | — |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Continuous Drain Current (ID) Max | 9.1 A per channel at 25 C | — |
| Pulsed Drain Current (IDM) Max | 11 A | — |
| On-Resistance (RDS(on)) Max | 11.8 mOhm at VGS = 10 V | — |
| Gate-Source Threshold Voltage (VGS(th)) | 1.35 V (typ) | — |
| Total Power Dissipation (PD) Max | 2 W | — |
| Hanay ng Temperature na Operasyon | -55 C to +150 C | -55C to +150C (junction) |
| Packhaging | 8-SOIC (SO-8) | 8-pin SOIC (SO-8), surface mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | IR MOSFET (Infineon hexfet-style trench) | IR MOSFET / Fifth Generation HEXFET |
| Lead-Free Status | Yes (PBF suffix) | — |
| Packaging | Tape & Reel (TR) | — |
| Tindminan RoHS | Compliant | Compliant (Pb-free, indicated by PBF suffix) |
| Channel Polarity | N-Channel (both) | — |
| Polarity / Configuration | — | Complementary N-Channel + P-Channel, dual MOSFET array |
| N-Channel VDS (Drain-Source Voltage) | — | 30 V |
| P-Channel VDS (Drain-Source Voltage) | — | -30 V |
| N-Channel Continuous Drain Current (ID) | — | 3.5 A |
| P-Channel Continuous Drain Current (ID) | — | 2.3 A |
| N-Channel R_DS(on) max | — | 0.10 ohm (at VGS = 10 V) |
| P-Channel R_DS(on) max | — | 0.25 ohm (at VGS = -10 V) |
| Total Package Power Dissipation (PD) | — | 2 W |
| Tape and Reel Packaging | — | Yes (TRPBF suffix) |
| Qualification | — | Consumer market |