IRF8734TRPBF vs IRLL024ZTRPBF Perbandingan

Perbandingan bersamaan detil IRF8734TRPBF dari Infineon dan IRLL024ZTRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF8734TRPBF IRLL024ZTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Technology StrongIRFET™ (HEXFET) HEXFET Power MOSFET (trench-gate)
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta 21 A —
On-Resistance RDS(on) max at VGS=10V 3.5 mOhm —
Gate Charge (Qg) typ 20 nC —
Power Dissipation (PD) at Ta 2.5 W —
Paket / Case 8-SOIC (SO-8) —
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C (junction) —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] —
Avalanche Energy Rating Fully characterized avalanche voltage —
Status RoHS Compliant (PBF suffix) Compliant
Lead-Free / Halogen-Free Lead-free (PBF suffix) —
Level MSL [DATA_NEEDED: MSL rating per J-STD-020] 1 (unlimited floor life)
Packaging Tape & Reel (TR) —
FET Type — N-Channel enhancement-mode
Drain-Source Voltage (VDS) max — 55 V
Gate-Source Voltage (VGS) max — ±16 V
Continuous Drain Current (ID) at TC=25°C — 5 A
Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V — 60 mΩ
Gate Threshold Voltage (VGS(th)) — 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO)
Total Gate Charge (Qg) typical — 7 nC
Power Dissipation (PD) at TA=25°C — 1 W
Operating Junction Temperature (TJ) — -55 °C to +150 °C
Paket — SOT-223 (TO-261-4)

Spek dan Sumber

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