IRF8734TRPBF vs IRLL024ZTRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRF8734TRPBF sa pamamagitan ng Infineon at IRLL024ZTRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRF8734TRPBF | IRLL024ZTRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Technology | StrongIRFET™ (HEXFET) | HEXFET Power MOSFET (trench-gate) |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta | 21 A | — |
| On-Resistance RDS(on) max at VGS=10V | 3.5 mOhm | — |
| Gate Charge (Qg) typ | 20 nC | — |
| Power Dissipation (PD) at Ta | 2.5 W | — |
| Packhaging / Kaso | 8-SOIC (SO-8) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +150C (junction) | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | — |
| Avalanche Energy Rating | Fully characterized avalanche voltage | — |
| Tindminan RoHS | Compliant (PBF suffix) | Compliant |
| Lead-Free / Halogen-Free | Lead-free (PBF suffix) | — |
| Level ng MSL | [DATA_NEEDED: MSL rating per J-STD-020] | 1 (unlimited floor life) |
| Packaging | Tape & Reel (TR) | — |
| FET Type | — | N-Channel enhancement-mode |
| Drain-Source Voltage (VDS) max | — | 55 V |
| Gate-Source Voltage (VGS) max | — | ±16 V |
| Continuous Drain Current (ID) at TC=25°C | — | 5 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | — | 60 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO) |
| Total Gate Charge (Qg) typical | — | 7 nC |
| Power Dissipation (PD) at TA=25°C | — | 1 W |
| Operating Junction Temperature (TJ) | — | -55 °C to +150 °C |
| Packhaging | — | SOT-223 (TO-261-4) |