IRF8734TRPBF vs IRLL024ZTRPBF 比較

詳細並排比較 IRF8734TRPBF 由 Infineon 與 IRLL024ZTRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRF8734TRPBF IRLL024ZTRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Technology StrongIRFET™ (HEXFET) HEXFET Power MOSFET (trench-gate)
電晶體類型 N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta 21 A —
On-Resistance RDS(on) max at VGS=10V 3.5 mOhm —
Gate Charge (Qg) typ 20 nC —
Power Dissipation (PD) at Ta 2.5 W —
封裝 / 外殼 8-SOIC (SO-8) —
安裝類型 Surface Mount Surface Mount
工作溫度範圍 -55C to +150C (junction) —
Gate-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical and min/max] —
Avalanche Energy Rating Fully characterized avalanche voltage —
RoHS 狀態 Compliant (PBF suffix) Compliant
Lead-Free / Halogen-Free Lead-free (PBF suffix) —
MSL 等級 [DATA_NEEDED: MSL rating per J-STD-020] 1 (unlimited floor life)
Packaging Tape & Reel (TR) —
FET Type — N-Channel enhancement-mode
Drain-Source Voltage (VDS) max — 55 V
Gate-Source Voltage (VGS) max — ±16 V
Continuous Drain Current (ID) at TC=25°C — 5 A
Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V — 60 mΩ
Gate Threshold Voltage (VGS(th)) — 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO)
Total Gate Charge (Qg) typical — 7 nC
Power Dissipation (PD) at TA=25°C — 1 W
Operating Junction Temperature (TJ) — -55 °C to +150 °C
封裝 — SOT-223 (TO-261-4)

資料表與資源

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