IRFB3207ZPBF vs IPB100N12S305ATMA2 Perbandingan

Perbandingan bersamaan detil IRFB3207ZPBF dari Infineon dan IPB100N12S305ATMA2 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFB3207ZPBF IPB100N12S305ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRFB3207ZPBF —
Series HEXFET OptiMOS 5 120V
Technology N-Channel MOSFET (HEXFET, Z-suffix ruggedized) —
Drain-Source Voltage (VDS) 75 V 120 V
Continuous Drain Current (ID) at TC=25C 120 A —
Silicon-Limited Drain Current 170 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
On-Resistance RDS(on) typ @ VGS=10V 3.3 mOhm —
On-Resistance RDS(on) max @ VGS=10V 4.1 mOhm —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissition (PD) at TC=25C 300 W —
Suhu Hubung Kerja -55 C to +175 C —
Paket TO-220AB (3-lead through-hole) —
Tipe Mounting Through Hole Surface Mount
Lead-Free / RoHS Yes (PBF suffix = lead-free) —
Level MSL N/A (through-hole) [DATA_NEEDED: MSL rating]
Avalanche Rated Yes (improved Z-variant ruggedness) —
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at Tc — 100 A
Power Dissipation (PD) at Tc — 300 W
Drain-Source On-Resistance RDS(on) — 0.0048 ohm (4.8 mΩ) at VGS=10 V
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Maximum Junction Temperature — 175 °C
Avalanche Energy (EAS) — 1445 mJ
Paket / Case — PG-TO263-3-2 (D2PAK)
Rentang Suhu Kerja — -55 °C to +175 °C (TJ)
Automotive Qualification — AEC-Q101 qualified
Status RoHS — Compliant

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