IRFB3207ZPBF vs IPB100N12S305ATMA2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFB3207ZPBF sa pamamagitan ng Infineon at IPB100N12S305ATMA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPB100N12S305ATMA2 - 120V 100A N-Ch MOSFET | Infineon OptiMOS 5
IPB100N12S305ATMA2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IRFB3207ZPBF | IPB100N12S305ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IRFB3207ZPBF | — |
| Series | HEXFET | OptiMOS 5 120V |
| Technology | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) | — |
| Drain-Source Voltage (VDS) | 75 V | 120 V |
| Continuous Drain Current (ID) at TC=25C | 120 A | — |
| Silicon-Limited Drain Current | 170 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 3.3 mOhm | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.1 mOhm | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: typical VGS(th)] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Power Dissition (PD) at TC=25C | 300 W | — |
| Temperature ng Junction na Operasyon | -55 C to +175 C | — |
| Packhaging | TO-220AB (3-lead through-hole) | — |
| Uri ng Pagpapasok | Through Hole | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| Level ng MSL | N/A (through-hole) | [DATA_NEEDED: MSL rating] |
| Avalanche Rated | Yes (improved Z-variant ruggedness) | — |
| Uri ng Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| Power Dissipation (PD) at Tc | — | 300 W |
| Drain-Source On-Resistance RDS(on) | — | 0.0048 ohm (4.8 mΩ) at VGS=10 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Maximum Junction Temperature | — | 175 °C |
| Avalanche Energy (EAS) | — | 1445 mJ |
| Packhaging / Kaso | — | PG-TO263-3-2 (D2PAK) |
| Hanay ng Temperature na Operasyon | — | -55 °C to +175 °C (TJ) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Tindminan RoHS | — | Compliant |