IRFB3207ZPBF vs IPB100N12S305ATMA2 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFB3207ZPBF disebabkan oleh Infineon dan IPB100N12S305ATMA2 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFB3207ZPBF IPB100N12S305ATMA2
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRFB3207ZPBF —
Series HEXFET OptiMOS 5 120V
Technology N-Channel MOSFET (HEXFET, Z-suffix ruggedized) —
Drain-Source Voltage (VDS) 75 V 120 V
Continuous Drain Current (ID) at TC=25C 120 A —
Silicon-Limited Drain Current 170 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
On-Resistance RDS(on) typ @ VGS=10V 3.3 mOhm —
On-Resistance RDS(on) max @ VGS=10V 4.1 mOhm —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissition (PD) at TC=25C 300 W —
Suhu Hubungan Operasi -55 C to +175 C —
Kemasan TO-220AB (3-lead through-hole) —
Jenis Pemasangan Through Hole Surface Mount
Lead-Free / RoHS Yes (PBF suffix = lead-free) —
Aras MSL N/A (through-hole) [DATA_NEEDED: MSL rating]
Avalanche Rated Yes (improved Z-variant ruggedness) —
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at Tc — 100 A
Power Dissipation (PD) at Tc — 300 W
Drain-Source On-Resistance RDS(on) — 0.0048 ohm (4.8 mΩ) at VGS=10 V
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
Maximum Junction Temperature — 175 °C
Avalanche Energy (EAS) — 1445 mJ
Kemasan / Case — PG-TO263-3-2 (D2PAK)
Gambaran Suhu Operasi — -55 °C to +175 °C (TJ)
Automotive Qualification — AEC-Q101 qualified
Status RoHS — Compliant

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