IRFB4127PBF - 200V, 76A N-Channel HEXFET MOSFET | Infineon
MPN: IRFB4127PBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.55 | $25.50 |
| 100 | $2.21 | $221.00 |
| 500 | $1.92 | $960.00 |
| 1,000 | $1.68 | $1,680.00 |
IRFB4127PBF Overview
A power MOSFET is a voltage-controlled semiconductor switch that uses a gate field to modulate conduction between drain and source terminals. N-channel enhancement-mode MOSFETs such as the IRFB4127PBF are the dominant building block in switched-mode power conversion, motor drive, and power-OR-ing topologies because they offer fast switching, low on-resistance per unit silicon area, and simple gate drive referenced to source. Within the broader taxonomy, this part belongs to discrete semiconductors -> MOSFETs -> N-channel power MOSFETs -> trench MOSFETs, ultimately falling under the broader category of power management semiconductors.
Key features include a continuous drain current rating of 76A at Tc, a pulsed current capability supporting short-duration overloads in SMPS rectifier service, and an avalanche-energy-rated body diode for improved dynamic dV/dt ruggedness. The fully characterized capacitance and avalanche safe operating area simplify thermal and reliability analysis, while the enhanced body diode enables reliable operation in synchronous rectification where the intrinsic diode conducts during dead-time. A maximum junction temperature of 175C supports high-temperature PCB environments.
Typical applications include high-efficiency synchronous rectification in SMPS, uninterruptible power supplies (UPS), battery management systems, motor drive circuits, and high-current DC-DC converters. The TO-220AB package provides robust mechanical mounting with a tab that can be bolted to a heatsink for sustained high-current operation.
When designing with this device, ensure gate drive voltage reaches at least 10V to fully enhance the channel and minimize conduction losses. A small gate-source resistor (10-100 Ohm) is recommended to suppress parasitic oscillations, and the heatsink must be sized for the worst-case continuous dissipation at the application switching frequency.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for IRFB4127PBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRFB4127PBF (same form factor and footprint) — differing in Part Number, Technology, Manufacturer, Mounting Type, Operating Junction Temperature.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRFB4227PBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRFB4019PBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRFB4615PBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRFB3207ZPBF
✅ Drop-In✓ In Stock
$1.62 / Unit
View Datasheet →IRFB7545PBF
✅ Drop-In✓ In Stock
$0.95 / Unit
View Datasheet →STP75NF20
✅ Drop-In📋 Reference alternative (not in catalog)
IRFB4127PBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IRFB4127PBF |
| Technology | TrenchFET Gen 6 (HEXFET) |
| Channel Type | N-Channel |
| Drain-Source Voltage (Vdss) | 200 V |
| Continuous Drain Current (Id) at Tc | 76 A |
| Gate-Source Voltage (Vgs) max | ±20 V |
| Drain-Source On-Resistance (Rds(on)) max | 20 mOhm |
| Total Gate Charge (Qg) | 100 nC |
| Power Dissipation (Pd) at Tc | 375 W |
| Operating Junction Temperature | -55C to +175C |
| Package / Case | TO-220AB (through-hole) |
| Mounting Type | Through Hole |
| RoHS Status | Lead-Free (PBF suffix indicates RoHS compliance) |
| Configuration | Single |
IRFB4127PBF Pin Configuration
| Pin 1 | Gate — Gate control input; drive to 10V for full enhancement |
| Pin 2 | Drain — Drain terminal; connected to tab/heatsink |
| Pin 3 | Source — Source terminal; gate-drive reference |
Typical Applications
IRFB4127PBF is suitable for 7 applications: Synchronous Rectification in SMPS, Uninterruptible Power Supply (UPS) Inverter, Battery Management Systems (BMS), Motor Drive and H-Bridge Circuits, High-Current DC-DC Converters, Solar Inverter and Renewable Energy, Welding and Plasma Cutting Power.
Synchronous Rectification in SMPS
The IRFB4127PBF's low 20 mOhm Rds(on) and 100 nC total gate charge make it well suited for synchronous rectification in 200V-class switched-mode power supplies. In a typical half-bridge or full-bridge topology, two IRFB4127PBF devices replace the secondary-side Schottky rectifiers, reducing conduction loss from I^2 * Rds(on) and improving converter efficiency by 2-4% at full load. The enhanced body-diode dV/dt ruggedness handles dead-time conduction without snap-off recovery issues. At 100 kHz switching, gate-drive loss is approximately Qg * Vgs * fsw = 20 mW per device, negligible at the system level. The TO-220AB tab provides straightforward heatsink mounting for continuous 76A operation in industrial SMPS designs.
Recommended
Uninterruptible Power Supply (UPS) Inverter
In UPS inverter stages operating from 192-220V DC bus rails, the IRFB4127PBF's 200V Vdss rating provides adequate margin below the bus voltage with 80% derating. The 76A continuous drain current at Tc supports inverter power levels up to 5 kW at 120V AC output. The TrenchFET Gen 6 process offers avalanche-energy-rated ruggedness for handling load transients and short-circuit conditions during battery-to-AC inversion. The 375W power dissipation rating with proper heatsinking ensures continuous operation at high duty cycles. The fully characterized SOA simplifies inverter-stage reliability analysis, and the TO-220AB package enables field-replaceable construction in commercial UPS products.
Recommended
Battery Management Systems (BMS)
In battery management and battery protection circuits, the IRFB4127PBF serves as a low-loss disconnect switch or active balancing element for high-voltage battery stacks. Its 20 mOhm Rds(on) minimizes voltage drop across the disconnect switch, preserving battery efficiency during high-current charge/discharge cycles. The ±20V Vgs rating is compatible with 12V gate-drive signals commonly used in BMS controllers. The 76A continuous current rating handles peak discharge currents in e-mobility and stationary storage applications. The TO-220AB package provides robust mechanical mounting for vibration-prone battery environments. Avalanche-rated ruggedness adds protection against inductive kickback when switching battery inductance.
Recommended
Motor Drive and H-Bridge Circuits
For H-bridge and three-phase motor drive circuits operating from 24-144V DC bus rails, the IRFB4127PBF provides the switching element for brushed DC and BLDC motor control. Its 76A continuous rating handles motor inrush currents during startup, while the 200V Vdss supports 144V rectified bus operation with adequate margin. The low 20 mOhm Rds(on) reduces conduction loss during PWM operation, improving motor efficiency and reducing heatsink size. The 100 nC gate charge enables PWM frequencies up to 50 kHz without excessive gate-drive losses. The TO-220AB package provides industry-standard footprint compatibility with existing motor drive designs, simplifying PCB layout and heatsink attachment.
Recommended
High-Current DC-DC Converters
In buck and boost converter designs delivering 30-100A output currents, the IRFB4127PBF serves as the main switching element where 200V input voltage headroom is needed. The 76A continuous current rating supports continuous output power up to 2 kW at 24V output, while the 100 nC gate charge keeps switching losses manageable at 50-100 kHz PWM frequencies. The TrenchFET Gen 6 technology's low Rds(on) of 20 mOhm improves full-load efficiency by 3-5% compared to older-generation MOSFETs. The TO-220AB package enables single-device or paralleled-device operation for higher current applications, with the tab providing direct heatsink thermal path. Suitable for industrial 48V-96V bus converters.
Recommended
Solar Inverter and Renewable Energy
In solar microinverters and string inverter applications, the IRFB4127PBF is used in the DC-DC boost stage and DC-AC inverter switching. Its 200V Vdss rating handles open-circuit solar panel voltages in residential and commercial PV systems (panels typically up to 150V Voc). The 76A continuous current supports high-power string inverters in the 3-5 kW range. The avalanche-rated body diode handles the dead-time conduction during synchronous switching. The 100 nC gate charge enables 50-100 kHz switching for compact magnetics design. The TO-220AB package provides reliable thermal dissipation in outdoor inverter enclosures where ambient temperature can reach 70C. Lead-free PBF suffix ensures compliance with renewable energy RoHS directives.
Recommended
Welding and Plasma Cutting Power
In inverter-based welding machines and plasma cutters, the IRFB4127PBF handles the primary-side switching at 200V DC bus derived from rectified mains. Its 76A continuous current supports welding output currents up to 200A at lower duty cycles. The avalanche energy rating withstands the inductive transients inherent in welding transformer switching. The TO-220AB package with heatsink mounting handles the thermal cycling characteristic of intermittent welding duty. The TrenchFET Gen 6 process provides the dV/dt ruggedness needed to survive the harsh switching environment of welding inverter stages, where voltage spikes from transformer leakage inductance can stress switching devices.
Recommended
Recommended Products Summary
Engineering reference data for IRFB4127PBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFB4227PBF | IRFB4019PBF | IRFB4615PBF | STP75NF20 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | STMicroelectronics |
| Package | TO-220AB | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same |
| Drain-Source Voltage (Vdss) | 200 V | 200 V | 150 V | 150 V | 200 V |
| Technology | TrenchFET Gen 6 (HEXFET) | TrenchFET | TrenchFET | TrenchFET | STripFET |
Key Differentiators
- TrenchFET Gen 6 technology with enhanced body diode dV/dt (vs IRFB4227PBF)
- Drop-in compatible across 200V HEXFET family (vs IRFB4019PBF)
- Cross-brand equivalence with STMicroelectronics STP75NF20 (vs STP75NF20)
Design Notes
At continuous 76A drain current, the IRFB4127PBF dissipates substantial heat through conduction loss. Estimated: with Rds(on) of 20 mOhm, conduction loss at 76A is approximately I^2 * Rds(on) = 115W. The TO-220AB package with proper heatsink attachment is mandatory for sustained high-current operation; junction-to-ambient thermal resistance without heatsink is approximately 62 C/W per JEDEC TO-220 standards, which would cause junction temperature to exceed 175C at 115W dissipation.
For TO-220AB through-hole mounting, ensure the PCB through-holes accommodate 1.0mm diameter pins (0.9mm typical) with sufficient annular ring for wave-soldering. The tab/heatsink connection should use thermal compound (e.g., Wakefield Type 120 or similar) when bolting to an external heatsink; insulator pads are required if the heatsink is electrically floating above ground potential. Maintain at least 5mm clearance between TO-220 body and adjacent components for convection cooling.
Gate voltage must reach at least 10V for full channel enhancement; driving with 5V logic signals will leave the MOSFET in linear region with high Rds(on) and rapid thermal failure. Do not exceed ±20V Vgs maximum. In bridge topologies, ensure dead-time insertion prevents shoot-through; the IRFB4127PBF's body diode supports the dead-time conduction interval. Always add a 10-100 Ohm gate-source resistor to suppress parasitic oscillations from gate-drive loop inductance.
Minimize high-current loop area in the drain-source switching path to reduce parasitic inductance and voltage overshoot. Use wide PCB traces or bus bars for the high-current paths; the gate-drive loop should be kept small and physically separated from the power loop. Place gate-drive components (driver IC, gate resistor, bypass capacitor) within 1cm of the gate pin. For paralleled operation, symmetric PCB layout with matched gate-drive paths is essential for current sharing.
Compliance Information
PBF suffix indicates lead-free construction per Infineon part-numbering convention; product is RoHS compliant. AEC-Q100 qualification not applicable - this is a discrete MOSFET not an automotive-qualified IC. Conflict minerals compliance per Infineon's published CMRT filings.
