IRFB4310PBF - 100V 130A N-Channel HEXFET MOSFET | Infineon
MPN: IRFB4310PBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.45 | $3.45 |
| 10 | $3.1 | $31.00 |
| 100 | $2.65 | $265.00 |
| 500 | $2.3 | $1,150.00 |
| 1,000 | $1.95 | $1,950.00 |
Drop-in alternatives for IRFB4310PBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRFB4310ZPBF
β Drop-Inπ Reference alternative (not in catalog)
IRFB4110G
β Drop-Inπ Reference alternative (not in catalog)
IRFS4310PBF
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IRFS7440TRLPBF
β Drop-Inβ In Stock
$0.98 / Unit
View Datasheet βSTP75NF75
β Drop-Inπ Reference alternative (not in catalog)
IRF3710STRLPBF
β Drop-Inβ In Stock
$1.23 / Unit
View Datasheet βIRFB4310PBF Maximum Ratings & Electrical Characteristics
| Transistor Type | N-Channel MOSFET |
| Technology | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at Tc=25C | 130 A |
| Maximum Power Dissition (PD) at Tc=25C | 300 W |
| On-Resistance RDS(on) max at VGS=10V | 7 mOhm |
| On-Resistance RDS(on) typical at VGS=10V | 5.6 mOhm |
| Total Gate Charge (Qg) | 170 nC |
| Operating Temperature Range | -55C to +175C (junction) |
| Package | TO-220AB (through-hole) |
| Mounting Type | Through Hole |
| Avalanche Rated | Yes |
| RoHS Status | Compliant |
| Lead-Free | Yes (Pb-free PBF suffix) |
IRFB4310PBF Pin Configuration
| Pin 1 | Gate β Gate control input (MOSFET gate) |
| Pin 2 | Drain β Drain terminal (also connected to mounting tab) |
| Pin 3 | Source β Source terminal |
| Pin TAB | Drain β Mounting tab - electrically connected to Drain (pin 2) |
Safe Operating Area (DC)
Typical Applications
IRFB4310PBF is suitable for 7 applications: Synchronous Rectification in SMPS, Uninterruptible Power Supply (UPS), High-Speed Power Switching, Hard-Switched High-Frequency Circuits, Automotive 48V Mild-Hybrid Systems, Solar Inverter and MPPT Stages, Industrial Motor Drive (Low-Voltage).
Synchronous Rectification in SMPS
The IRFB4310PBF is ideal for synchronous rectification in 48 V-input switched-mode power supplies. Its 7 mOhm max RDS(on) and 100 V VDSS rating provide ample margin against 48 V bus transients, while the 170 nC total gate charge enables clean switching at 100-200 kHz without excessive gate driver loss. Placed as the low-side MOSFET in a buck converter, it dissipates roughly I_rms^2 * 7 mOhm of conduction loss - at 50 A RMS this is 17.5 W, requiring a modest heatsink. According to Infineon's HEXFET application guidance, the IRFB4310PBF's improved dV/dt ruggedness handles the hard-switching transitions of bridge topologies without avalanche failure.
Recommended
Uninterruptible Power Supply (UPS)
The IRFB4310PBF serves as the main switching element in 48 V battery-to-AC inverter stages of UPS systems. Its 130 A continuous current capability supports 5-6 kVA systems, while the 100 V VDSS comfortably exceeds the 48 V battery voltage plus inductive overshoot. The HEXFET process provides avalanche energy absorption for the inductive kick from transformer leakage inductance during commutation. In a typical double-conversion UPS, two IRFB4310PBF in half-bridge configuration switch at 20-30 kHz, and their 300 W power dissipation rating at Tc=25C allows continuous operation with a moderate aluminum heatsink. The industrial qualification per the manufacturer datasheet makes it suitable for long-life UPS installations.
Recommended
High-Speed Power Switching
The IRFB4310PBF supports high-speed switching applications up to several hundred kHz thanks to its optimized gate charge and capacitance. The 170 nC total gate charge is low for a 130 A/100 V part, and with a 2 A gate driver the turn-on and turn-off times are typically 30-50 ns. According to Infineon's HEXFET datasheet, this part is qualified for hard-switched and high-frequency circuits, making it suitable for class D audio amplifiers, RF power amplifiers, and pulsed power applications. The improved dynamic dV/dt ruggedness prevents parasitic turn-on from Miller coupling in bridge configurations, eliminating the need for negative gate drive in most designs.
Recommended
Hard-Switched High-Frequency Circuits
The IRFB4310PBF is qualified for hard-switched high-frequency circuits per its datasheet, including resonant and quasi-resonant converters, ZVS/ZCS bridges, and pulse-forming networks. Its avalanche energy rating (EAS) allows it to absorb the energy from unclamped transformer leakage inductance without failure - a critical feature for snubberless designs. At 200 kHz operation with a 400 V VDS transient stress test, the IRFB4310PBF demonstrates rugged switching. Engineers should use a low-impedance gate driver and minimize source-inductance in the gate return path to fully realize the device's high-frequency capability. According to the manufacturer datasheet, the part is suitable for industrial-grade applications.
Recommended
Automotive 48V Mild-Hybrid Systems
The IRFB4310PBF is suitable for 48 V mild-hybrid vehicle applications where the electrical bus reaches peaks of 52-54 V during load dump. Its 100 V VDSS provides comfortable margin over the maximum bus voltage, and its industrial qualification provides the reliability baseline needed for underhood deployment. Applications include the 48 V starter-generator inverter, DC-DC converters stepping down to 12 V, and active suspension actuators. With 130 A continuous current capability, a single IRFB4310PBF can handle 5-6 kW of power in a 48 V system. According to the manufacturer datasheet, the device is qualified for the industrial market and uses robust packaging for harsh environments.
Recommended
Solar Inverter and MPPT Stages
The IRFB4310PBF serves in solar MPPT (maximum power point tracking) boost converters and string inverter DC-DC stages. With 100 V VDSS it handles open-circuit solar panel voltages up to 80 V (24V panels in series), and its 7 mOhm RDS(on) keeps conduction losses low for the 95-98% efficiency targets of modern solar inverters. In a 3 kW residential string inverter, two IRFB4310PBF in interleaved boost configuration handle 30 A continuous each at 50 kHz switching. The HEXFET process and TO-220AB package provide thermal performance suitable for fanless outdoor inverter enclosures when mounted to a properly sized heatsink.
Recommended
Industrial Motor Drive (Low-Voltage)
The IRFB4310PBF can be used in low-voltage industrial motor drives for 48-72 V battery-powered equipment such as automated guided vehicles (AGVs), electric pallet jacks, and small electric vehicles. Its 100 V VDSS and 130 A continuous current capability support 5-7 kW drive power in a three-phase inverter configuration using six MOSFETs. The HEXFET ruggedness handles the regenerative braking current peaks from motor inductance. According to Infineon's HEXFET datasheet, the device is qualified for industrial markets and provides long-term reliability for 24/7 industrial operation. Gate drive is typically provided by dedicated three-phase drivers like the IRS2132.
Recommended
Recommended Products Summary
Engineering reference data for IRFB4310PBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFB4310ZPBF | IRFB4110G | IRFS4310PBF | STP75NF75 | IRF3710STRLPBF |
|---|---|---|---|---|---|---|
| Package | TO-220AB | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same |
| Brand | Infineon | Infineon | Infineon | Infineon | STMicroelectronics | Infineon |
| Drain-Source Voltage VDSS | 100 V | 100 V | 60 V (-40%) | 100 V | 75 V (-25%) | 100 V |
| Continuous Drain Current ID | 130 A | 130 A | 120 A (-8%) | 130 A | 75 A (-42%) | 57 A (-56%) |
| RDS(on) max at 10V | 7 mOhm | 7 mOhm | 4.5 mOhm (better) | 7 mOhm | 11 mOhm (+57%) | 23 mOhm (+229%) |
| Total Gate Charge Qg | 170 nC | ~150 nC | [DATA_NEEDED] | 170 nC | [DATA_NEEDED] | [DATA_NEEDED] |
| Power Dissipation PD | 300 W | 300 W | [DATA_NEEDED] | 300 W | 300 W | 200 W |
| Technology | HEXFET (IR MOSFET) | HEXFET | HEXFET | HEXFET | STripFET | HEXFET |
| Price (qty 1, USD) | $3.45 | ~$4.00 | ~$3.20 | ~$3.80 | ~$2.80 | ~$2.50 |
Key Differentiators
- Industry-best RDS(on) for 100V TO-220 class at 7 mOhm (vs STP75NF75)
- Avalanche-rated ruggedness for unclamped inductive switching (vs IRF3710STRLPBF)
- Same-brand drop-in alternative available with optimized process (vs IRFB4310ZPBF)
Design Notes
Estimated: at 50 A continuous drain current and 7 mOhm RDS(on), the IRFB4310PBF dissipates approximately I_rms^2 * RDS(on) = 2500 * 0.007 = 17.5 W of conduction loss. With TO-220AB mounted on a 5 C/W heatsink, junction-to-ambient thermal resistance is approximately 6 C/W (junction-to-case 0.5 C/W plus case-to-heatsink 0.5 C/W plus heatsink-to-ambient 5 C/W), yielding a 105C junction temperature rise above 25C ambient. For reliable operation, target junction temperatures below 150C, requiring ambient below 45C at 50 A continuous current. Forced air cooling can reduce heatsink size significantly.
Use a 10 ohm gate resistor for typical 100 kHz switching to control ringing, dropping to 2-5 ohm for hard-switched high-frequency circuits. Place the gate resistor within 5mm of the gate pin to minimize parasitic inductance. Source inductance is critical in TO-220 packages - use a star-ground topology where the source lead and gate-drive return connect at the same physical point. Add a 100k ohm gate-source pull-down resistor to keep the MOSFET off during controller startup when the gate driver output is high-impedance. The mounting tab is electrically connected to the drain - use an isolated mounting kit or insulating thermal pad if the heatsink is grounded to a different potential.
The IRFB4310PBF has 100 V VDSS rating but switching transients from inductive loads can exceed this - always add a snubber (RC or RCD) across the drain-source for inductive switching applications. The datasheet absolute maximum VGS is +/- 20V; exceeding this destroys the gate oxide. Below VGS(th) of approximately 2-4V the MOSFET is not fully enhanced and RDS(on) increases dramatically, causing hot-spot failures - always verify the gate drive reaches at least 10V for full enhancement. According to the manufacturer datasheet, this part is qualified for the Industrial market and is not AEC-Q100 qualified for automotive underhood applications.
In half-bridge and full-bridge topologies, minimize the high-side-low-side source-to-drain switching loop inductance by placing the two MOSFETs as close together as possible. Use wide copper pours for power traces (at least 2 oz copper or 0.5mm thickness) and keep the gate loop physically separated from the power loop to avoid capacitive coupling that can cause parasitic turn-on. For high-current applications (above 50 A continuous), use multiple TO-220 devices in parallel with separate gate resistors to prevent current imbalance from threshold voltage variations.
Compliance Information
Pb-free PBF suffix indicates lead-free finish. RoHS compliant per DigiKey listing. Qualified for the Industrial market per manufacturer datasheet - not AEC-Q100 qualified for automotive underhood applications. Conflict minerals compliance per Infineon corporate policy.
