IRFB7437PBF vs IRFB3207ZPBF 比較

詳細並排比較 IRFB7437PBF 由 Infineon 與 IRFB3207ZPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRFB7437PBF IRFB3207ZPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Technology StrongIRFET™, N-Channel Trench MOSFET N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Drain-Source Voltage (VDS) 40 V 75 V
Continuous Drain Current (ID, Tc=25°C) 195 A —
Silicon-Limited Drain Current 250 A 170 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] [DATA_NEEDED: pulsed drain current value]
R_DS(on) typ @ VGS=10V 1.5 mΩ —
R_DS(on) max @ VGS=10V 2.0 mΩ —
Gate-Source Threshold Voltage (VGS(th) typ) 3.0 V (1.7 V min, 3.9 V max per datasheet family) —
Total Gate Charge (Qg) 150 nC —
Miller Plateau Charge (Qgd) 49 nC —
Power Dissipation (PD @ Tc=25°C) 230 W —
工作接面溫度 -55°C to +175°C -55 C to +175 C
Thermal Resistance Junction-to-Case (RθJC) 0.62 °C/W —
封裝 TO-220AB (through-hole, 3 leads) TO-220AB (3-lead through-hole)
安裝類型 Through Hole Through Hole
Lead Finish Lead-free (PBF - Pb-free plating) —
RoHS 狀態 Compliant —
MSL 等級 Not Applicable (through-hole package) N/A (through-hole)
AEC-Q101 Automotive Not qualified (industrial/consumer) —
Part Number — IRFB3207ZPBF
Series — HEXFET
Continuous Drain Current (ID) at TC=25C — 120 A
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
On-Resistance RDS(on) max @ VGS=10V — 4.1 mOhm
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C — 300 W
Lead-Free / RoHS — Yes (PBF suffix = lead-free)
Avalanche Rated — Yes (improved Z-variant ruggedness)

資料表與資源

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