IRFB7437PBF vs IRFB3207ZPBF Perbandingan
Perbandingan bersamaan detil IRFB7437PBF dari Infineon dan IRFB3207ZPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRFB7437PBF | IRFB3207ZPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Technology | StrongIRFET™, N-Channel Trench MOSFET | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Drain-Source Voltage (VDS) | 40 V | 75 V |
| Continuous Drain Current (ID, Tc=25°C) | 195 A | — |
| Silicon-Limited Drain Current | 250 A | 170 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | [DATA_NEEDED: pulsed drain current value] |
| R_DS(on) typ @ VGS=10V | 1.5 mΩ | — |
| R_DS(on) max @ VGS=10V | 2.0 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th) typ) | 3.0 V (1.7 V min, 3.9 V max per datasheet family) | — |
| Total Gate Charge (Qg) | 150 nC | — |
| Miller Plateau Charge (Qgd) | 49 nC | — |
| Power Dissipation (PD @ Tc=25°C) | 230 W | — |
| Suhu Hubung Kerja | -55°C to +175°C | -55 C to +175 C |
| Thermal Resistance Junction-to-Case (RθJC) | 0.62 °C/W | — |
| Paket | TO-220AB (through-hole, 3 leads) | TO-220AB (3-lead through-hole) |
| Tipe Mounting | Through Hole | Through Hole |
| Lead Finish | Lead-free (PBF - Pb-free plating) | — |
| Status RoHS | Compliant | — |
| Level MSL | Not Applicable (through-hole package) | N/A (through-hole) |
| AEC-Q101 Automotive | Not qualified (industrial/consumer) | — |
| Part Number | — | IRFB3207ZPBF |
| Series | — | HEXFET |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |