IRFB7534PBF - 60V 195A StrongIRFET N-Channel MOSFET | Infineon
MPN: IRFB7534PBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.5 | $3.50 |
| 10 | $2.98 | $29.80 |
| 100 | $2.45 | $245.00 |
| 500 | $2.1 | $1,050.00 |
| 1,000 | $1.85 | $1,850.00 |
Drop-in alternatives for IRFB7534PBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRFB7530PBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRFB3006PBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRFB52N15DPBF
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.65 / Unit
View Datasheet →STP75NF75
✅ Drop-In📋 Reference alternative (not in catalog)
FDB047N10
✅ Drop-In📋 Reference alternative (not in catalog)
IRFB7534PBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IRFB7534PBF |
| Technology | StrongIRFET™ (planar N-channel) |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) max | 60 V |
| Continuous Drain Current (ID) at Tc=25C | 195 A |
| Power Dissipation (PD) at Tc=25C | 294 W |
| On-Resistance RDS(on) max at VGS=10V | 2.4 mOhm |
| Gate Threshold Voltage VGS(th) | 3.7 V (typ) |
| Avalanche Energy Rated | Yes |
| Package | TO-220AB |
| Mounting Type | Through Hole |
| Operating Temperature Range | -55C to +175C |
| RoHS Status | Compliant (PbF suffix) |
| MSL Level | MSL1 (unlimited floor life) |
IRFB7534PBF Pin Configuration
| Pin 1 | Gate — Gate control input; drive to 10V for full enhancement |
| Pin 2 | Drain — Drain terminal; connected to load high side |
| Pin 3 | Source — Source terminal; reference for gate drive and load return |
Safe Operating Area (SOA) - DC
Typical Applications
IRFB7534PBF is suitable for 6 applications: Brushed DC Motor Drive, BLDC Motor Drive (3-Phase Inverter), Battery Protection and Switching, Synchronous Rectifier in DC-DC Converters, E-Bike and Power Tool Controllers, Industrial 24V Load Switch.
Brushed DC Motor Drive
The IRFB7534PBF's 2.4 mΩ RDS(on) and 195 A continuous drain current make it an excellent low-side switch in brushed DC motor H-bridge drives. With VDS rated to 60 V it covers 12 V and 24 V battery rails with substantial avalanche headroom for inductive kickback at PWM turn-off. The TO-220AB package bolts directly to a chassis or aluminum heatsink, dissipating the P = I²R conduction loss (e.g., 24 W at 100 A) without requiring forced-air cooling. Place the MOSFET in the low-side position with a gate driver delivering 10-12 V VGS, and add a 10 kΩ gate-source pull-down to prevent Miller-effect turn-on during the high-side FET's switching transitions. Typical use cases include power tools, e-bike controllers, and automotive accessory motors.
Recommended
BLDC Motor Drive (3-Phase Inverter)
In a 3-phase brushless DC motor inverter, the IRFB7534PBF serves as both the high-side and low-side switch in each half-bridge leg, forming a six-MOSFET topology driven by a 3-phase gate-driver IC. Its 2.4 mΩ RDS(on) minimizes conduction loss during the 120-degree commutation intervals, while the 195 A rating handles the high inrush during motor startup and direction reversal. The StrongIRFET™ technology provides robust short-circuit withstand, critical when a winding fault momentarily pulls the MOSFET into its saturation region. Pair with an IRS2302STRPBF or IR2114SSTRPBF gate driver for bootstrap high-side drive, and use a current-sense resistor or shunt in the DC-link return to feed the FOC algorithm.
Recommended
Battery Protection and Switching
The IRFB7534PBF functions as a low-side disconnect switch in 12 V, 24 V, and 48 V battery management systems, where its low 2.4 mΩ RDS(on) keeps steady-state voltage drop under 50 mV even at 20 A continuous load - critical for accurate fuel-gauging. Its 195 A peak rating handles the inrush of capacitive loads such as inverters and motor controllers. The avalanche-rated body diode absorbs the back-EMF when switching off inductive battery loads. Place it in series with the battery negative terminal, gate-pulled-up through a 100 kΩ resistor to the battery, and driven low by an NPN transistor or gate driver controlled by the BMS microcontroller. The TO-220AB package simplifies hand-soldered assembly for prototype battery packs.
Recommended
Synchronous Rectifier in DC-DC Converters
As the synchronous rectifier (low-side) MOSFET in a buck converter, the IRFB7534PBF replaces a Schottky diode and reduces rectifier loss from ~0.5 V to ~0.01 V (I x RDS(on)). At 50 A load and 12 V to 3.3 V conversion, this saves roughly 25 W of dissipation and improves overall converter efficiency by 3-5%. The 60 V VDS comfortably handles 24 V industrial bus voltages after derating. Drive the gate from the controller's synchronous-rectifier output through a gate-driver IC, and ensure the dead-time is short (30-50 ns) to minimize body-diode conduction loss. The StrongIRFET™ avalanche rating absorbs ringing on the switch node at turn-off.
Recommended
E-Bike and Power Tool Controllers
E-bike traction controllers and cordless power-tool motor drivers benefit from the IRFB7534PBF's combination of low RDS(on) and high peak-current capability. A typical 36 V / 250 W e-bike controller running at 15 A continuous sees only ~0.5 W of conduction loss per MOSFET, allowing the controller to fit in a small sealed aluminum housing without active cooling. The 60 V VDS rating provides 24 V of margin above the 36 V nominal battery, tolerating regen braking transients. In power-tool applications, the 195 A rating supports the 5-10x inrush spike when the motor starts under load. TO-220AB's tab mounts directly to the controller housing for effective passive cooling.
Recommended
Industrial 24V Load Switch
In 24 V industrial control systems, the IRFB7534PBF acts as a high-current load switch for solenoids, relays, heaters, and motor loads. Its 60 V VDS rating covers the 24 V nominal rail with full margin for transients on long inductive cables (per IEC 61131-2 industrial automation standards). The 195 A continuous rating allows it to switch multi-kW loads directly without pre-driver stages. Drive the gate from a PLC output or isolated gate driver through a 100 Ω gate resistor to control dV/dt and limit ringing. The TO-220AB package is the de-facto industrial standard for panel-mount and DIN-rail power modules, simplifying mechanical integration.
Recommended
Recommended Products Summary
Engineering reference data for IRFB7534PBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFB7530PBF | IRFB3006PBF | IRFB52N15DPBF | STP75NF75 | FDB047N10 |
|---|---|---|---|---|---|---|
| Package | TO-220AB | TO-220AB (same) | TO-220AB (same) | TO-220AB (same) | TO-220AB (same) | TO-220AB (same) |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | STMicroelectronics | onsemi |
| VDS max | 60 V | 60 V | 60 V | 150 V | 75 V | 100 V |
| Continuous Drain Current (Tc=25C) | 195 A | 195 A | 195 A | 51 A | 75 A | 120 A |
| RDS(on) max @ VGS=10V | 2.4 mOhm | 3.3 mOhm | 2.5 mOhm | 32 mOhm | 11 mOhm | 4.7 mOhm |
| Power Dissipation (Tc=25C) | 294 W | 294 W | 294 W | 330 W | 300 W | 260 W |
| Technology | StrongIRFET planar | StrongIRFET planar | StrongIRFET planar | StrongIRFET planar | STripFET | PowerTrench |
| RoHS Compliant | Yes (PbF) | Yes (PbF) | Yes (PbF) | Yes (PbF) | Yes | Yes |
Key Differentiators
- Lowest RDS(on) in the 60V TO-220AB StrongIRFET family (vs IRFB7530PBF)
- Higher voltage rating than 60V-class competitors (vs IRFB3006PBF)
- Higher peak current handling vs higher-voltage Infineon parts (vs IRFB52N15DPBF)
- Stronger current rating vs cross-brand equivalents (vs STP75NF75)
Design Notes
The IRFB7534PBF is rated 294 W at Tc=25C, but this assumes infinite heatsink on the case. In practice, with a typical TO-220AB junction-to-ambient thermal resistance of 62 C/W (no heatsink) or 30 C/W (small clip-on heatsink), continuous dissipation is limited to roughly 2-4 W before the junction approaches 150C. For high-current switching applications, use a TO-220-specific extruded aluminum heatsink with thermal grease and a clip; aim for case-to-ambient resistance below 5 C/W to handle 100+ A continuous loads.
Minimize the drain-source loop inductance by placing the MOSFET directly on the bus capacitor with the shortest possible lead/trace length. Use a 1-10 Ω gate resistor to dampen ringing, and add a 10 kΩ gate-source pull-down resistor to prevent Miller-effect turn-on during high dV/dt switching events. The TO-220 leads should be trimmed to ~5 mm above the PCB to reduce lead inductance and radiated EMI.
Do not exceed 60 V on the drain even transiently - inductive kickback from motor or relay loads can exceed VDS within microseconds. Add a flyback diode or TVS across inductive loads, and ensure VGS never exceeds ±20 V (use a Zener clamp on the gate if driving from a higher-voltage source). The body diode is avalanche-rated but not designed for sustained rectification above a few amps; use an external Schottky or synchronous-rectifier MOSFET for high-frequency switching applications.
Compliance Information
PbF suffix confirms lead-free (Pb-free) plating per Infineon datasheet. RoHS compliant. Not AEC-Q100 qualified - use IPP/IBS-series parts for automotive. MSL1 rated.
