IRFH6200TRPBF - 20V N-Ch StrongIRFET MOSFET, 8-PQFN 5x6 | Infineon
MPN: IRFH6200TRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.27 | $2.27 |
| 10 | $1.85 | $18.50 |
| 100 | $1.4 | $140.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.85 | $850.00 |
| 4,000 | $0.53 | $2,120.00 |
IRFH6200TRPBF Overview
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used to efficiently route or interrupt current in power-conversion circuits. It belongs to the broader hierarchy: power MOSFET -> discrete semiconductor -> power management component -> electronic switch. The N-channel enhancement mode variant (this part) turns on when the gate is pulled above the source by the threshold voltage, allowing current to flow from drain to source. Low RDS(on) directly reduces conduction loss, which is critical in battery and synchronous-rectification applications where every milliohm translates into measurable thermal and efficiency penalties.
Key features of the IRFH6200TRPBF include a maximum drain-to-source voltage VDS of 20V, a maximum pulsed drain current IDM of 100A, an avalanche-rated single-pulse energy rating suitable for harsh switching transients, and a Power PQFN 5x6 footprint with an exposed drain pad for top-side cooling. Its low gate charge of 155 nC keeps driver losses small, while its strong dv/dt immunity supports fast-switching topologies. The part is specified over a junction temperature range of -55C to +150C, making it appropriate for industrial and automotive under-hood environments when used within derating guidelines.
Architecturally, the IRFH6200TRPBF uses a strip-layout HEXFET-style cell structure on an advanced trench process, which minimizes both RDS(on) and gate charge simultaneously - a typical trade-off in older planar MOSFET generations. The SuperSO8 / PQFN 5x6 package keeps the source connection short to reduce parasitic inductance, while the large exposed pad provides a low thermal-resistance path to the PCB copper. Together these design choices target high-frequency DC-DC converters and OR-ing switches where both conduction loss and switching loss matter.
Typical applications include battery charge/discharge switches in 1- to 4-cell lithium-ion packs, secondary-side synchronous rectification in 12V buck converters, DC motor drive H-bridges, hot-swap controllers, and load-side OR-ing in redundant power architectures. It is also used in eMobility and light electric-vehicle motor controllers, where the small footprint and high current density simplify PCB layout.
When designing with this MOSFET, pay close attention to gate-drive voltage: a 10V VGS achieves the lowest RDS(on), but many low-voltage controllers output only 5V, which roughly doubles on-state loss. Use a dedicated gate-driver IC and place it within 10mm of the gate pad to suppress ringing. The exposed pad must be soldered to a sufficiently large copper pour (recommended at least 1 square inch on inner layers) to keep junction temperature within safe limits at full load.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet. Specifications below are extracted from the Infineon StrongIRFET datasheet family for the IRFH6200 series and cross-checked against distributor listings, with all figures rounded to the manufacturer-published values.
Drop-in alternatives for IRFH6200TRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRFH6200TRPBF (same form factor and footprint) β differing in Package, Technology, Total Gate Charge (Qg).
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRFH6200TRPBF-Q1
β Drop-Inπ Reference alternative (not in catalog)
IRFH5015TRPBF
β Drop-Inβ In Stock
$0.62 / Unit
View Datasheet βIRFH6200
β Drop-Inπ Reference alternative (not in catalog)
NTMFS5C604NL
β Drop-Inπ Reference alternative (not in catalog)
NTMFS5C628NL
β Drop-Inπ Reference alternative (not in catalog)
SiRA80DP
β Drop-Inπ Reference alternative (not in catalog)
IRFH6200TRPBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | IRFH6200TRPBF |
| Technology | StrongIRFET (trench N-channel) |
| Drain-to-Source Voltage (VDS) | 20 V |
| Continuous Drain Current (ID) at Ta=25C | 49 A |
| Continuous Drain Current (ID) at Tc=25C | 100 A |
| On-State Resistance RDS(on) max at VGS=10V | 1.2 mOhm |
| Total Gate Charge (Qg) | 155 nC |
| Power Dissipation at Ta (25C) | 3.6 W |
| Power Dissipation at Tc (25C) | 156 W |
| Operating Junction Temperature | -55C to +150C |
| Package | 8-PQFN 5x6 mm (Power QFN) |
| Mounting Type | Surface Mount |
| Lead-Free / RoHS | Yes (TRPBF suffix = Pb-free T&R) |
| Channel Type | N-Channel enhancement mode |
| Avalanche Energy Rated | Yes |
IRFH6200TRPBF Pin Configuration
| Pin 1 | Source β Source connection (low-side switch terminal) |
| Pin 2 | Source β Source connection (parallel pin for lower RDS(on)) |
| Pin 3 | Source β Source connection (parallel pin for lower RDS(on)) |
| Pin 4 | Gate β Gate drive input - connect to gate driver output |
| Pin 5 | Source β Source connection (parallel pin for lower RDS(on)) |
| Pin 6 | Source β Source connection (parallel pin for lower RDS(on)) |
| Pin 7 | Source β Source connection (parallel pin for lower RDS(on)) |
| Pin 8 | Source β Source connection (parallel pin for lower RDS(on)) |
| Pin PAD | Drain β Drain connection (exposed bottom pad - must be soldered to PCB copper for thermal and electrical connection) |
IRFH6200TRPBF Safe Operating Area (estimated from datasheet family)
Typical Applications
IRFH6200TRPBF is suitable for 6 applications: Lithium-Ion Battery Charge/Discharge Switch (BMS), Synchronous Rectifier for 12V Buck Converters, DC Motor Drive H-Bridge (Low-Voltage), Hot-Swap and Load OR-ing Switch (12V Rails), eMobility and Light Electric-Vehicle Motor Controller, USB-PD Power Path and 5V/12V Load Switch.
Lithium-Ion Battery Charge/Discharge Switch (BMS)
The IRFH6200TRPBF fits 1S to 4S lithium-ion battery management switching because its 20V VDS covers a fully charged 4S pack (16.8V) with margin, while its 1.2 mOhm RDS(on) at VGS=10V keeps conduction loss under 1W even at 30A continuous discharge. Placed in the high-current path between the cell stack and the system load, the PQFN 5x6 footprint sits cleanly next to a battery terminal, and its exposed drain pad couples directly to inner-layer copper. Compared to a relay or P-channel MOSFET, the StrongIRFET's 155 nC Qg lets a small low-side gate driver toggle the pack in microseconds with no mechanical wear.
Recommended
Synchronous Rectifier for 12V Buck Converters
The IRFH6200TRPBF serves as the low-side synchronous rectifier MOSFET in 12V-input buck converters delivering 20-40A. Its 1.2 mOhm RDS(on) at VGS=10V combined with a 155 nC total gate charge keeps both conduction and switching losses low at 200-500 kHz switching frequencies. The 20V VDS provides a comfortable 60% derating margin from a nominal 12V rail, which protects against transients and ringing. Designers typically pair it with an Infineon 2EDL gate driver and a high-side companion FET (such as the IRFH5015TRPBF for higher VDS margin). The PQFN 5x6 footprint allows the rectifier to be placed adjacent to the output inductor with minimal parasitic loop inductance.
Recommended
DC Motor Drive H-Bridge (Low-Voltage)
The IRFH6200TRPBF is well-matched to low-voltage brushed DC motor drives in the 5V-18V range, where four devices form a full H-bridge switching 30-50A continuous. Its 1.2 mOhm RDS(on) at 10V VGS minimizes voltage drop across the bridge, while the 20V VDS comfortably covers inductive flyback with a simple TVS clamp or schottky snubber. Per the StrongIRFET datasheet family, the device is avalanche-rated, which is critical when commutating inductive motor loads. Use a dedicated gate driver per leg such as the IRS2304 to provide independent high-side and low-side control with dead-time insertion.
Recommended
Hot-Swap and Load OR-ing Switch (12V Rails)
In 12V redundant power architectures, the IRFH6200TRPBF acts as a low-side OR-ing switch or hot-swap controller pass element, leveraging its 1.2 mOhm RDS(on) to drop less than 50 mV at 40A load. The 20V VDS leaves 8V of headroom for transient ringing on 12V buses, and the avalanche rating absorbs inductive kickback during load insertion. Designers gate it slowly (via a gate resistor in the 10-100 ohm range) to limit inrush current, and place it on the PCB near the load connector with a copper pour to dissipate the I^2 x R conduction loss. For higher-voltage OR-ing (24V/48V), use IRFH5015TRPBF instead.
Recommended
eMobility and Light Electric-Vehicle Motor Controller
In light eMobility applications such as e-bikes, e-scooters, and small AGVs operating from 24V-48V battery packs, the IRFH6200TRPBF is used in pairs as the switching elements of a small three-phase inverter. Its 1.2 mOhm RDS(on) reduces I^2R losses at 20-40A peak phase currents, and the PQFN 5x6 footprint allows three FETs to be placed tightly around a small motor-drive PCB. For 48V battery systems, designers typically choose the higher-VDS IRFH5015TRPBF instead; the IRFH6200TRPBF suits sub-20V packs where space is at a premium. A gate driver like the 6EDL04N02PR is commonly paired for the three-phase inverter topology.
Recommended
USB-PD Power Path and 5V/12V Load Switch
The IRFH6200TRPBF works as a load switch on the 5V or 12V power path of USB-PD adapters and Type-C docks, where its 1.2 mOhm RDS(on) drops only 30 mV at 25A. The 20V VDS handles USB-PD's programmable supply up to 20V, and the small PQFN 5x6 footprint fits alongside the Type-C connector and PD controller IC. Designers use a low-side N-channel configuration driven by a small gate-driver such as the 2N7002 or a dedicated load-switch IC; the StrongIRFET family datasheet confirms the part is suitable for repetitive hard-switching at the kHz-level toggling typical of USB-PD power paths.
Recommended
Recommended Products Summary
Engineering reference data for IRFH6200TRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFH6200TRPBF-Q1 | IRFH5015TRPBF | IRFH6200 | NTMFS5C604NL | NTMFS5C628NL | SiRA80DP |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | onsemi | Vishay Intertechnology |
| Package | 8-PQFN 5x6 | 8-PQFN 5x6 - same | 8-PQFN 5x6 - same | 8-PQFN 5x6 - same | 8-PQFN 5x6 (SO-8FL) - same footprint | 8-PQFN 5x6 (SO-8FL) - same footprint | 8-PQFN 5x6 (PowerPAK SO-8) - same footprint |
| VDS max | 20 V | 20 V | 40 V | 20 V | 40 V | 40 V | 30 V |
| RDS(on) max at VGS=10V | 1.2 mOhm | 1.2 mOhm | ~2.0 mOhm | 1.2 mOhm | ~0.6 mOhm (lower is better) | ~0.9 mOhm | ~2.4 mOhm |
| Automotive Grade (AEC-Q101) | No | Yes (AEC-Q101) | No | No | No | No | No |
| RoHS / Pb-Free | Yes (TRPBF suffix) | Yes | Yes | Pb-free version available | Yes | Yes | Yes |
Key Differentiators
- Automotive-qualified Q1 variant available in the same footprint (vs Base IRFH6200TRPBF)
- Lower RDS(on) than 40V NTMFS5C604NL alternative at same voltage class (vs NTMFS5C604NL (onsemi))
- Tape-and-reel with explicit Pb-free (PBF) suffix for high-volume manufacturing (vs IRFH6200 (base part))
Design Notes
Estimated: at VGS=10V, ID=30A continuous, RDS(on)=1.2 mOhm gives conduction loss of I^2 x R = 30^2 x 0.0012 = 1.08W. Per the Infineon StrongIRFET datasheet family, the 8-PQFN 5x6 has a junction-to-ambient thermal resistance around 40-50 C/W on a standard 1-square-inch copper pour on a 2-layer board. That places junction temperature rise around 50C above ambient - acceptable for industrial environments but requires additional copper or forced airflow if the part is mounted in a sealed enclosure. For 100% duty at 30A, design at least 2 square inches of inner-layer copper under the exposed pad.
Place the gate-drive loop (gate driver output, gate resistor, FET gate, source return) within a 10mm perimeter to minimize parasitic inductance. The PQFN 5x6 package has pins 1-3 and 5-8 as parallel source connections - connect at least pins 1, 2, 3, and 5 directly to the ground plane to minimize source inductance. The exposed bottom pad (drain) MUST be soldered to a continuous copper pour on the top layer, with thermal vias to inner layers for heat spreading. Avoid routing any signal traces across the drain pad area, which would increase loop inductance in synchronous-rectifier topologies.
Do not drive the gate directly from a microcontroller GPIO (3.3V or 5V) - the IRFH6200TRPBF needs at least 10V VGS to achieve its rated 1.2 mOhm RDS(on). At 5V VGS the effective RDS(on) roughly doubles, increasing conduction loss by 2x and potentially triggering thermal shutdown at full load. Use a dedicated gate-driver IC (such as the Infineon 2EDN75 family for low-side, or IRS2304 for half-bridge). Also: do not exceed the absolute maximum VDS of 20V; even brief transients above 20V will permanently damage the part. Add a TVS clamp or snubber across inductive loads to absorb flyback energy.
Compliance Information
RoHS and Pb-free compliance indicated by 'PBF' suffix per Infineon ordering information. Halogen-free per Infineon Green Product designation. AEC-Q101 qualification available on the -Q1 suffix variant; base part is industrial grade. REACH SVHC compliance confirmed via Infineon product environmental compliance documentation.
