IRFH7440TRPBF vs IRF7854TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFH7440TRPBF sa pamamagitan ng Infineon at IRF7854TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFH7440TRPBF IRF7854TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Presyo ng Yunit (USD) — $0.48
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 40 V 80 V
Continuous Drain Current (ID, Tc=25°C) 85 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance (RDS(on) max at VGS=10V) 2.4 mΩ —
Gate-Source Voltage (VGS) ±20 V —
Total Gate Charge (Qg) 92 nC —
Power Dissipation (PD, Tc=25°C) 104 W —
Temperature ng Junction na Operasyon -55°C to +150°C —
Technology StrongIRFET™ (HEXFET) HEXFET (planar N-channel)
Packhaging 8-PQFN (5x6 mm) with exposed thermal pad SO-8
Uri ng Pagpapasok Surface Mount Surface Mount
Gate Drive Optimization 10V (Normal Level), switching < 100 kHz —
Qualification JEDEC standard JEDEC industrial, Normal level
Lead-Free / RoHS Lead-Free, RoHS Compliant (PBF suffix) Yes (PBF suffix, lead-free)
MSL (Moisture Sensitivity Level) MSL 1 —
Typical Applications Brushed motor drive, DC-DC converters, solenoid/load switching —
Continuous Drain Current (ID) at Ta=25°C — 10 A
Power Dissipation (PD) at Ta=25°C — 2.5 W
On-Resistance RDS(on) max at VGS=10V — 13.4 mΩ
Gate-Source Threshold Voltage VGS(th) max — 4.9 V
Total Gate Charge Qg — 27 nC
Hanay ng Temperature na Operasyon — -55°C to +150°C (TJ)
Solder Process — Reflow and wave-solderable
Gate Drive Voltage (recommended) — 10 V

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita