IRFR3710ZTRPBF vs IRLR3410TRLPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFR3710ZTRPBF sa pamamagitan ng Infineon at IRLR3410TRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFR3710ZTRPBF | IRLR3410TRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 56 A | 17 A |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed IDM] | 60 A |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | 18 mOhm | — |
| Power Dissipation (PD) at TC=25C | 140 W | 79 W |
| Temperature ng Junction na Operasyon | -55C to +175C | -55C to +175C |
| Technology | HEXFET (IR MOSFET) | HEXFET (5th generation) N-Channel MOSFET |
| Packhaging | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (tape and reel) |
| Tindminan RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRLR3410TRLPBF |
| On-Resistance RDS(on) max @ VGS=10V | — | 105 mOhm |
| On-Resistance RDS(on) max @ VGS=5V | — | [DATA_NEEDED: RDS(on) @ VGS=5V] |
| Gate-Source Threshold VGS(th) typ | — | 2.0 V |
| Total Gate Charge (Qg) | — | 22.7 nC |
| Gate Drive Level | — | Logic level (5V capable) |
| RoHS Compliance | — | Compliant (Pb-free) |
| Level ng MSL | — | 1 |
| Avalanche Rated | — | Yes (UIS tested) |